Table of Contents
1. Introduction
- 1.1. Overview and Structure
- 1.2. Methodology
- 1.3. Development of LED
- 1.4. LED Types and Characteristics
2. LED Manufacturing Process
- 2.1. Introduction to the Manufacturing Process
- 2.2. Substrate Single Crystal Manufacturing Process
- 2.2.1. CZ Method Manufacturing Process
- 2.2.2. Sapphire Crystal Growth Method
- 2.2.3. Substrate Technology Development Trends
- 2.3. Epi-Wafer Manufacturing Process
- 2.3.1. Composite Semiconductor Epitaxial Growth Method
- 2.3.1.1. MOCVD Method
- 2.3.1.2. MBE Method
- 2.3.1.3. GSMBE Method (Gas Source MBE)
- 2.3.1.4. LPE Method
- 2.3.1.5. HVPE Method
- 2.3.1.6. ALE Method
- 2.3.2. Epi-Growth Technology
- 2.3.2.1. Structure of LED
- 2.3.2.2. Buffer Layer Growth
- 2.3.2.3. Epi-Growth on the InAlGaN Quaternary Activated Layer
- 2.3.2.4. Growth of InN Epi Layer
- 2.3.2.5. Growth of Quantum Dot Structure
- 2.3.2.6. Horizontal Epi Growth
- 2.3.2.7. Epi Growth using Patterned Sapphire
- 2.3.2.8. P-GaN Roughness Epi Growth Technology
- 2.4. Chip Manufacturing Process
- 2.4.1. LED Chip Structure and Manufacturing Process
- 2.4.2. Unit Process
- 2.4.2.1. Photolithography
- 2.4.2.2. Transparent Electrode Formation
- 2.4.2.3. Etching
- 2.4.2.4. Metallization (Electrodes, Pads and Reflective Layer
Formation Processes)
- 2.4.2.5. Passivation
- 2.4.2.6. Lapping
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