LED Manufacturing Process, Equipment ,Sub-material Technology Analysis

Table of Contents

1. Introduction

• 1.1. Overview and Structure
• 1.2. Methodology
• 1.3. Development of LED
• 1.4. LED Types and Characteristics

2. LED Manufacturing Process

• 2.1. Introduction to the Manufacturing Process
• 2.2. Substrate Single Crystal Manufacturing Process
  • 2.2.1. CZ Method Manufacturing Process
  • 2.2.2. Sapphire Crystal Growth Method
  • 2.2.3. Substrate Technology Development Trends
• 2.3. Epi-Wafer Manufacturing Process
  • 2.3.1. Composite Semiconductor Epitaxial Growth Method
    • 2.3.1.1. MOCVD Method
    • 2.3.1.2. MBE Method
    • 2.3.1.3. GSMBE Method (Gas Source MBE)
    • 2.3.1.4. LPE Method
    • 2.3.1.5. HVPE Method
    • 2.3.1.6. ALE Method
  • 2.3.2. Epi-Growth Technology
    • 2.3.2.1. Structure of LED
    • 2.3.2.2. Buffer Layer Growth
    • 2.3.2.3. Epi-Growth on the InAlGaN Quaternary Activated Layer
    • 2.3.2.4. Growth of InN Epi Layer
    • 2.3.2.5. Growth of Quantum Dot Structure
    • 2.3.2.6. Horizontal Epi Growth
    • 2.3.2.7. Epi Growth using Patterned Sapphire
    • 2.3.2.8. P-GaN Roughness Epi Growth Technology
• 2.4. Chip Manufacturing Process
  • 2.4.1. LED Chip Structure and Manufacturing Process
  • 2.4.2. Unit Process
    • 2.4.2.1. Photolithography
    • 2.4.2.2. Transparent Electrode Formation
    • 2.4.2.3. Etching
    • 2.4.2.4. Metallization (Electrodes, Pads and Reflective Layer Formation Processes)
    • 2.4.2.5. Passivation
    • 2.4.2.6. Lapping