Report: Key NAND Flash Memory Design Intellectual Property

Key NAND Flash Memory Design Intellectual Property

Published by

Forward Insights

Published

2009/07

Content info

152 Pages

Product code

FOIN91536

Price

From US $ 9999

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Abstract

Technical innovations, particularly in NAND flash memory design are key enablers of multi-level cell NAND flash memories, especially 3-bit per cell and 4-bit per cell technologies. This report identifies important intellectual property related to sensing architectures, source voltage noise compensation, programming algorithms, disturbs reduction, temperature compensation, high voltage switch, coding schemes and error correction codes from Hynix, Micron, Samsung, SanDisk, STMicroelectronics and Toshiba.