Abstract
This report compares the 3-bit per cell NAND flash memory architectures and
key parameters of SanDisk/Toshiba, Hynix and Samsung and analyzes the
advantages and disadvantages of each implementation.
About the Author
Luca Crippa is Senior Technical Analyst for Design Architecture. Luca
has more than 10 years of experience in MLC flash memory design.
Previously, he was Senior Designer for 48nm floating gate and 36nm floating
gate NAND flash memories at Qimonda AG as well as 90nm and 60nm MLC NAND flash
products at STMicroelectronics.
He was instrumental in the development of 64Mb, 128Mb and 256Mb MLC NOR flash
products at STMicroelectronics and is the author/co-author of 20 U.S. patents
and the book Memories in Wireless Systems (Springer-Verlag ed., 2008).
Luca received his Bachelors degree at ITIS G. Marconi, Dalmine, Italy in 1992
and a Masters degree in Electronic Engineering at the Politecnico of Milan in
1999. His thesis topic was Analog circuits design for Multilevel Flash Memory.
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