CMP Technology: Competition, Products, Markets

Table of Contents

Chapter 1 Introduction

Chapter 2 Executive Summary

• 2.1 Introduction
• 2.2 Market Opportunities

Chapter 3 Planarization Methods

• 3.1 Need for Planarity
  • 3.1.1 Lithography
  • 3.1.2 Deposition
  • 3.1.3 Etching
• 3.2 Applications
  • 3.2.1 Dielectrics
  • 3.2.2 Metals
• 3.3 Planarization Techniques
  • 3.3.1 Local Planarization
    • 3.3.1.1 Deposition-Etchback
    • 3.3.1.2 ECR
    • 3.3.1.3 Oxide Reflow
    • 3.3.1.4 Spin-on-Glass
    • 3.3.1.5 TEOS-Ozone
    • 3.3.1.6 Laser
  • 3.3.2 Global Planarization
    • 3.3.2.1 Spin-On Polymer
    • 3.3.2.2 Polyimide Coating
    • 3.3.2.3 Isotropic Etch
    • 3.3.2.4 Spin Etch Planarization
    • 3.3.2.5 Electropolishing
• 3.4 CMP
  • 3.4.1 Background
  • 3.4.2 Research Efforts
  • 3.4.3 Advantages and Disadvantages
  • 3.4.4 Process Parameters
    • 3.4.4.1 STI Planarization
    • 3.4.4.2 Copper CMP
    • 3.4.4.3 Low-K Integration
    • 3.4.4.4 Defect Density
    • 3.4.4.5 Metrology
  • 3.4.5 Device Processing Parameters
    • 3.4.5.1 Memory Devices
    • 3.4.5.2 Logic Devices

Chapter 4 CMP Consumables

• 4.1 Slurries
  • 4.1.1 Types
  • 4.1.2 pH Effects
  • 4.1.3 Oxidizers
  • 4.1.4 Particle Morphology Effects
  • 4.1.5 Chemical Distribution Management
  • 4.1.6 Slurry Supplier Profiles
  • 4.1.7 Abrasive Suppliers
• 4.2 Post-CMP Clean
• 4.3 Polishing Pads
  • 4.3.1 Types
  • 4.3.2 Performance
  • 4.3.3 Slurryless Pads

Chapter 5 CMP Equipment

• 5.1 Single-Head Approach
  • 5.1.1 Advantages
  • 5.1.2 Disadvantages
• 5.2 Multi-Head Approach
  • 5.2.1 Advantages
  • 5.2.2 Disadvantages
• 5.3 Equipment Profiles
  • 5.3.1 Applied Materials
  • 5.3.2 Ebara
  • 5.3.3 Strasbaugh
  • 5.3.4 Novellus
  • 5.3.5 Nikon
  • 5.3.6 Doosan Mecatec
  • 5.3.7 Other Entrants
• 5.4 Clustered Tools
• 5.5 Competitive Non-CMP Tools

Chapter 6 User Issues

• 6.1 Cost of Ownership
• 6.2 User Requirements
• 6.3 Benchmarking a Vendor
  • 6.3.1 Pricing
  • 6.3.2 Vendor Commitment and Attitudes
  • 6.3.3 Vendor Capabilities
  • 6.3.4 System Capabilities
• 6.4 User-Supplier Synergy
  • 6.4.1 Feedback During Equipment Evaluation
  • 6.4.2 Feedback During Device Production
• 6.5 Reliability
• 6.6 Equipment Maintainability

Chapter 7 Market Forecast

• 7.1 Introduction
• 7.2 Market Forecast Assumptions
• 7.3 Equipment Market
  • 7.3.1 Introduction
  • 7.3.2 CMP Polisher Market
• 7.4 Consumable Market
  • 7.4.1 Slurry
  • 7.4.2 Pads

LIST OF FIGURES

• 1.1 Process Integration for CMP
• 3.1 Planarization Lengths of Various Methods
• 3.2 Normalized Removal Rates
• 3.3 Reduced Complexity With Copper
• 3.4 Copper Loss From CMP
• 3.5 CMP Copper Process Technologies
• 3.6 CMP Performance Improvements
• 3.7 Polish Endpoint Control
• 4.1 Effect of Nitrate Ions on the Cu Removal Rate
• 4.2 Removal Rate of Ta
• 4.3 Bulk Chemical Distribution System
• 4.4 Through The Brush Chemical Delivery
• 4.5 Megasonics Post-CMP Clean
• 4.6 Micrograph Of 3M Slurryless Pad
• 6.1 Effect of Tool MTBF on CMP Cost
• 6.2 Removal Rate Vs Throughput and CMP Cost
• 7.1 Worldwide CMP Polisher Market
• 7.2 Worldwide CMP Slurry Market
• 7.3 Worldwide CMP Pad Market

LIST OF TABLES

• 3.1 Levels of Integration of Dynamic Rams
• 3.2 Interconnect Levels of Logic Device
• 3.3 Typical Process Specifications
• 3.4 Organic Polymers for IMD Applications
• 3.5 CMP Process Variables
• 3.6 Optimized CMP and Post-CMP Clean Parameters
• 3.7 Interconnect Materials by Segment
• 4.1 Abrasive Suppliers and Products
• 4.2 Oxide CMP Pad Properties and Performance
• 6.1 Polisher Equipment Targets
• 6.2 Post-CMP Clean Equipment Targets
• 7.1 Worldwide CMP Polisher Market
• 7.2 Worldwide CMP Polisher Market Shares
• 7.3 Worldwide CMP Slurry Market
• 7.4 Worldwide Slurry Market Shares
• 7.5 Worldwide CMP Pad Market