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> The Global Market for Equipment and Materials for IC Manufacturing
Market Research Report
The Global Market for Equipment and Materials for IC Manufacturing
Published by
The Information Network
Published
2009/10
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Product code
IF6131
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Table of Contents
Chapter-1: Introduction
Chapter-2: Low-K Dielectric Issues and Trends
2.1 Introduction
2.2 Ideal Dielectric
2.3 Types of Low-K Dielectrics
2.3.1 FSG
2.3.2 HSQ
2.3.3 Nanoporous Silica
2.3.4 Spin-on Polymers
2.3.5 BCB
2.3.6 Flowfill
2.3.7 CVD
2.3.8 AF4
2.3.9 PTFE
2.4 Summary
2.4.1 Processing Issues
2.4.2 Integration Issues
Chapter-3: Lithography Issues And Trends
3.1 Optical Systems
3.1.1 Step-and-Repeat Aligners
3.1.2 248nm DUV Resist
3.1.3-193nm DUV Resist
3.1.4 Mix-and-Match
3.1.5 Immersion Lithography
3.1.6 EUV
3.2 X-Ray Systems
3.2.1 X-Ray Sources
3.2.2 X-Ray Masks
3.2.3 X-Ray Steppers
3.2.4 X-Ray Resists
3.3 Electron Beam Systems
3.4 Ion Beam Systems
3.4.1 Direct Write
3.4.2 Ion Channel Masking
3.4.3 Ion Projection
3.5 Nano-Imprint Lithography
3.6 New Technologies
3.6.1 Mulith Reference Distribution Aerial Image Formation
3.6.2 Holograms
3.6.3 X-Ray Laser
3.6.4 Atom Lithography
3.6.5 Microlenses
3.6.7 EWL Lithography
3.7 Evaluation of Lithography Cost of Ownership
3.7.1 Introduction
3.6.2 Cost of Ownership Model
3.6.3 Results of Cost of Ownership Calculation
3.6.4 Individual Cost Estimation
Lithography System Cost
Process Costs
Mask Costs
3.7 Conclusion
Chapter-4: CMP Issues and Trends
4.1 Need for Planarity
4.1.1 Lithography
4.1.2 Deposition
4.1.3 Etching
4.2 Applications
4.2.1 Dielectrics
4.2.2 Metals
4.3 Planarization Techniques
4.3.1 Local Planarization
4.3.1.1 Deposition-Etchback
4.3.1.2 ECR
4.3.1.3 Oxide Reflow
4.3.1.4 Spin-on-Glass
4.3.1.5 TEOS-Ozone
4.3.1.6 Laser
4.3.2 Global Planarization
4.3.2.1 Polymer
4.3.2.2 Polyimide
4.3.2.3 Isotropic Etch
4.3.2.4 Spin Etch Planarization
4.3.2.5 Electropolishing
4.4 Chemical Mechanical Polishing (CMP)
4.4.1 Background
4.4.2 Research Efforts
4.4.3 Advantages and Disadvantages
4.4.4 Process Parameters
4.4.4.1 STI Planarization
4.4.4.2 Copper CMP
4.4.4.3 Low-K Integration
4.4.4.4 Defect Density
4.4.4.5 Metrology
Chapter-5: Factory Automation Issues and Trends
5.1 Introduction
5.2 Elements of Automation
5.2.1 Tool Automation
5.2.2 Intrabay Automation
5.2.3 Interbay Automation
5.2.4 Material-Control System
5.3 Flexible Automation
5.4 Reliability
5.5 Tool Issues and Trends
5.5.1 Flexible Tool Interface
5.5.2 Vacuum Robotics
5.5.3 AGV
5.5.4 CMP
5.5.5 300-mm Wafer Transport
5.5.6 Mini-Environments and Cleanroom Issues
Chapter-6: Thin film Deposition Issues and Trends
6.1 Physical Vapor Deposition
6.1.1 Sputtering Technology
6.1.2 Plasma Technology
6.1.3 Reactor Designs
6.1.3.1 Long-Throw Deposition
6.1.3.2 Collimated Sputter Deposition
6.1.3.3 Showerhead Deposition
6.1.3.4 Ionized PVD
6.1.4 Semiconductor Processing
6.1.4.1 Feature Patterning
6.1.4.2 Gap Fill
6.2 Chemical Vapor Deposition (CVD) Techniques
6.2.1 APCVD
6.2.2 LPCVD
6.2.3 PECVD
6.2.4 HDPCVD
6.2.5 ALD
Chapter-7: Plasma Etching Issues and Trends
7.1 Introduction
7.2 Processing Issues
7.2.1 Chlorine Versus Fluorine Processes
7.2.2 Multilevel Structures
7.2.3 New Metallization Materials
7.2.4 GaAs Processing
7.3 Plasma Stripping
7.3.1 Photoresist Stripping
7.3.2 Low-K Removal
Chapter-8: Cluster Tools Issues and Trends
8.1 Definitions
8.2 Device Technology and Integrated Processing
8.3 Main Functional Units
8.3.1 Central Handling Platform
8.3.2 Cassette Stations
8.3.3 Extension Modules
8.3.4 Single Process Modules
8.3.5 Batch Modules
8.3.6 Multiple Process Modules
8.4 Cluster Tool Communications
8.4.1 Cluster Tool Controller
8.4.2 Transport Module Controller
8.4.3 Process Module Controller
8.4.4 Control Software
8.4.5 Human Interface Software
8.4.6 Networking Software
8.5 Vacuum System Design
8.6 Trends
8.6.1 Deposition - Plasma Etch
8.6.2 Deposition - Rapid Thermal Processing
8.6.3 Lithography - Resist Processing
8.6.4 Diagnostics - Process
8.6.5 CMP Polish - Clean
Chapter-9: Chemicals and Materials Issues and Trends
9.1 Liquid Chemicals
9.1.1 Acids and Solvents
9.1.2 Resists
9.1.2.1 Resist Materials
9.1.2.2 Resist Strippers
9.2 Purity Requirements
9.2.1 Purification Methods
9.1.1.1 Trends For Purity - Trace Elements
9.2.2 Particulates
9.2.2.1 Particulate Removal Techniques
9.2.2.2 Particle Monitoring
9.3 Chemical Management
9.4 Gases
9.4.1 Requirements
9.4.1.1 Purification Alternatives
9.4.2 Particulate Considerations
9.4.2.1 Particle Monitoring
9.4.2.2 Filtration Methods
9.4.3 Summary
9.5 Chemical Management
9.6 Sputtering and Evaporation Materials
9.6.1 Technology Issues
9.6.2 Purity Requirements
Chapter-10: Contamination Issues and Trends
10.1 Liquid Chemicals
10.1.1 Purification Methods
10.1.2 Particulates
10.1.2.1 Effects on Yield
10.1.2.2 Particle Removal
10.1.2.3 Particle Monitoring
10.1.3 Bulk Distribution vs Bottles
10.1.4 Piping System Construction
10.1.4.1 Materials of Construction
10.1.4.2 Cost Analysis
10.2 Gases
10.2.1 Technology Issues
10.2.2 Requirements
10.2.2.1 Purification Alternatives
10.2.2.2 Purity Trends
10.2.2.3 Particulate Considerations
10.3 Deionized Water
10.3.1 Purification Specifications
10.3.2 Purification Methods
10.3.3 Purity Measurement Techniques
10.3.4 Filtration and Ultrafiltration
10.3.5 Piping System Construction
10.3.6 DI Water System Costs
10.4 Processing Equipment
10.4.1 Detection Methods
10.4.2 Removal Techniques
Chapter-11: Metrology
11.1 Defect Review/Wafer Inspection
11.1.2 Defect Review
11.1.2.1 SEM Defect Review
11.1.2.2 Optical Defect Review
11.1.2.3 Other Defect Review
11.1.3 Patterned Wafer Inspection
11.1.3.1 E-Beam Patterned Wafer Inspection
11.1.3.2 Optical Patterned Wafer Inspection
11.1.4 Unpatterned Wafer Inspection
11.1.5 Macro-Defect Inspection
11.2 Thin Film Metrology
11.2.1 Metal Thin-Film Metrology
11.2.2 Non-Metal Thin-Film Metrology
11.2.3 Substrate Metrology
11.3 Lithography Metrology
11.3.1 Overlay
11.3.2 CD
11.3.3 Mask (Reticle) Metrology/Inspection
Chapter-12: Market Forecast
12.1 Market Drivers
12.1.1 Semiconductor Market
12.1.2 Technical Trends
12.1.3 Economic Trends
12.1.4 Geographic Trends
12.1.1.1 China
12.1.4.2 Asia
12.1.4.3 Europe
12.1.4.4 Japan
12.1.4.5 United States
12.2 Market Forecast Assumptions
12.3 Low-K Market
12.4 Lithography Market
12.5 CMP Market
12.5.1 CMP Polisher Market
12.5.2 CMP Slurry Market
12.6 Factory Automation Market
12.7 Thin Film Deposition Market
12.7.1 Chemical Vapor Deposition Market
12.7.2 Physical Vapor Deposition Market
12.8 Plasma Etching Market
12.9 Cluster Tool Market
12.9.1 Flexible Cluster Tool Market
12.9.2 Non-Flexible Cluster Tool Market
12.10 Chemical and Materials Market
12.10.1 Forecast by Chemical and Material
12.10.2 Market Shares
12.11 Cleanroom and Contamination Market
12.12 Metrology Market
FIGURES
2.1 Interconnect Delay for Copper/Low-K
3.1 Lithography Roadmap
3.2 Lens Arrangement For Submicron Features
3.3 Advanced Optical Lithography Scenarios
3.4 Mix-and-Match Approaches
3.5 High Index Refractive Materials
3.6 EUV Lithography
3.7 Illustration of X-Ray Lithography
3.8 Schematic Of Scalpel Electron Beam System
3.9 Multi-Source E-Beam Lithography
3.10 Principles of LEEPL
3.11 Ion Projection Lithography System
3.12 Hermoplastic Nanoimprint Lithography Process
3.13 Step And Flash Nanoimprint Lithography Process
3.14 Mulith Reference Distribution Aerial Image Formation
3.15 Schematic of Microlens
3.16 Mapper Mask-Based Lithography
3.17 Mapper Maskless Lithography
3.18 CoO Value in DRAM Mass Production
3.19 Lithography Costs for 40,000 Wafers/Mask
3.20 Lithography Costs for 1,000 Wafers/Mask
4.1 Planarization Lengths of Various Methods
4.2 Normalized Removal Rates
4.3 Reduced Complexity With Copper
4.4 Copper Loss From CMP
4.5 CMP Copper Process Technologies
4.6 CMP Performance Improvements
4.7 Polish Endpoint Control
5.1 Material-Control System
5.2 Traditional and Flexible Automated Material Handling System
5.3 Overhead Monorail Delivery - Cassette in Box, Cassette in SMIF Pod
5.4 Stocker Design and Interfaces
6.1 Schematic Of Sputtering System
6.2 Magnetron Sputtering Design
6.3 Showerhead Reactor Design
6.4 Ionized PVD
6.5 APCVD Reactor
6.6 Tube CVD Reactor
6.7 HDPCVD Reactor
6.8 ALD Versus PVD Copper Barrier
7.1 Various Enhanced Designs (a) Helicon, (b) Multiple ECR, (c) Helical Resonator
7.2 Schematic of Inductively Coupled Plasma Source
7.3 Schematic of the HRe Source
7.4 Schematic of the Dipole Magnet Source
7.5 Schematic of Chemical Downstream Etch
7.6 Silicon Trench Structure
7.7 Dual Damascene Dielectric Etch Approaches
8.1 Basic Cluster Tool Architecture
8.2 Basic Cluster Tool Architecture
8.3 Communications Architecture In A Cluster Tool
9.1 Chemical Management Services Tasks
9.2 ITRS Roadmap
10.1 Relationship Between Device Yield and Particles
10.2 Relationship Between Die Yield and Cost Size
10.3 Sources of Particles
11.1 Thin Film Metrology Challenges
11.2 Spectroscopic Ellipsometry Diagram
11.4 ITRS Overlay Technology Roadmap
11.5 NIST Line Edge Roughness Model
11.6 ITRS Metrology Roadmap
11.7 Schematic Of OCD Optics
11.8 Microlithography Process And Measurements
12.1 Low-K Deposition Market Shares
12.2 Worldwide Lithography Market Shares
12.3 Semiconductor Equipment Utilization
12.4 Market Shares of Automated Wafer Transfer Suppliers
12.5 Worldwide MCVD Market Shares
12.6 Worldwide DCVD Market Shares
12.7 Worldwide PVD Market Shares
12.8 Worldwide Market Shares for Dry Etch Equipment
12.9 Distribution of Etch Sales by Type
12.10 Market Forecast of Flexible Cluster Tools
12.11 Market Shares of Flexible Cluster Tools
12.12 Market Forecast of Non-Flexible Cluster Tools
12.13 Market Shares of Non-Flexible Cluster Tools
12.14 Worldwide Market Shares of Sputtering Target Suppliers
12.15 Worldwide Market Shares of Liquid Chemical Suppliers
12.16 Worldwide Market Shares of Photoresist Suppliers
12.17 Worldwide Market Shares of Silicon Wafer Suppliers
12.18 Worldwide Market Shares of Gas Suppliers
12.19 Total Metrology Market Forecast
12.20 Total Metrology Market Shares
TABLES
2.1 Low-K Material Requirements
2.2 Low-K Materials
3.1 Lithography Requirements for IC Production
3.2 Characteristics of X-Ray Systems
3.3 Basic Conditions of CoO Model
3.4 Calculation List of Lithography System Cost
3.5 Throughput Estimation of X-Ray Lithography
3.6 Cost of Reticle/X-Ray Mask
3.7 Phase Shift Mask and X-Ray Mask Manufacturing
4.1 Levels of Integration of Dynamic Rams
4.2 Interconnect Levels of Logic Device
4.3 Typical Process Specifications
4.4 Organic Polymers for IMD Applications
4.5 CMP Process Variables
4.7 Optimized CMP and Post-CMP Clean Parameters
4.8 Interconnect Materials by Segment
7.1 Silicon Wafer Usage 2003 - 2009
7.2 Plasma Source Comparison
7.3 Typical Process Specifications
7.4 Dry Resist Stripping Systems
8.1 Model for DRAM Production Line
9.1 Common Wafer Processing Chemicals
9.2 Photoresist Stripping Solutions
9.3 Wet Stripping Systems
10.1 Advantages and Disadvantages of Various Cleaning Methods
10.2 Chemical and Material Compatibility
10.3 Piping System Economic Analysis for Positive Developer
10.4 Gas Control System Issues
10.5 Range of Purity of CVD Gases
10.6 Potential Hazards of Processing Gases
10.7 Particle Sources
10.8 Location of In-Situ Monitors by Equipment Type
11.1 Comparison Of White-Light With Multiple-Angle Laser Ellipsometry
12.1 Worldwide Capital Spending 2007-2009
12.2 Worldwide GDP997-2008
12.3 Worldwide Market Forecast Low-K Market
12.4 Worldwide Stepper Market
12.5 Worldwide CMP Polisher Market
12.6 Worldwide CMP Market Shares
12.7 Worldwide CMP Slurry Market
12.8 Worldwide Forecast of Automated Transfer Tools
12.9 Worldwide CVD Market Forecast
12.10 Worldwide PVD Market Forecast
12.11 Worldwide Market Forecast of Plasma Etching Systems
12.12 Worldwide Forecast of Chemicals and Materials
12.13 Worldwide Wafer Fab Construction Spending Forecast
12.14 Total Metrology Market Forecast
Related Report
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2009 GPS Semiconductors
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2009 Logic
2009 Semiconductors
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