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Market Research Report

The Global Market for Equipment and Materials for IC Manufacturing

Published by The Information Network Contact us : +1-860-674-8796
Published 2009/10 Content info  
Product code IF6131
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Description TOC

Table of Contents

Chapter-1: Introduction

Chapter-2: Low-K Dielectric Issues and Trends

  • 2.1 Introduction
  • 2.2 Ideal Dielectric
  • 2.3 Types of Low-K Dielectrics
    • 2.3.1 FSG
    • 2.3.2 HSQ
    • 2.3.3 Nanoporous Silica
    • 2.3.4 Spin-on Polymers
    • 2.3.5 BCB
    • 2.3.6 Flowfill
    • 2.3.7 CVD
    • 2.3.8 AF4
    • 2.3.9 PTFE
  • 2.4 Summary
    • 2.4.1 Processing Issues
    • 2.4.2 Integration Issues

Chapter-3: Lithography Issues And Trends

  • 3.1 Optical Systems
    • 3.1.1 Step-and-Repeat Aligners
    • 3.1.2 248nm DUV Resist
    • 3.1.3-193nm DUV Resist
    • 3.1.4 Mix-and-Match
    • 3.1.5 Immersion Lithography
    • 3.1.6 EUV
  • 3.2 X-Ray Systems
    • 3.2.1 X-Ray Sources
    • 3.2.2 X-Ray Masks
    • 3.2.3 X-Ray Steppers
    • 3.2.4 X-Ray Resists
  • 3.3 Electron Beam Systems
  • 3.4 Ion Beam Systems
    • 3.4.1 Direct Write
    • 3.4.2 Ion Channel Masking
    • 3.4.3 Ion Projection
  • 3.5 Nano-Imprint Lithography
  • 3.6 New Technologies
    • 3.6.1 Mulith Reference Distribution Aerial Image Formation
    • 3.6.2 Holograms
    • 3.6.3 X-Ray Laser
    • 3.6.4 Atom Lithography
    • 3.6.5 Microlenses
    • 3.6.7 EWL Lithography
  • 3.7 Evaluation of Lithography Cost of Ownership
    • 3.7.1 Introduction
    • 3.6.2 Cost of Ownership Model
    • 3.6.3 Results of Cost of Ownership Calculation
    • 3.6.4 Individual Cost Estimation
      • Lithography System Cost
      • Process Costs
      • Mask Costs
  • 3.7 Conclusion

Chapter-4: CMP Issues and Trends

  • 4.1 Need for Planarity
    • 4.1.1 Lithography
    • 4.1.2 Deposition
    • 4.1.3 Etching
  • 4.2 Applications
    • 4.2.1 Dielectrics
    • 4.2.2 Metals
  • 4.3 Planarization Techniques
    • 4.3.1 Local Planarization
      • 4.3.1.1 Deposition-Etchback
      • 4.3.1.2 ECR
      • 4.3.1.3 Oxide Reflow
      • 4.3.1.4 Spin-on-Glass
      • 4.3.1.5 TEOS-Ozone
      • 4.3.1.6 Laser
    • 4.3.2 Global Planarization
      • 4.3.2.1 Polymer
      • 4.3.2.2 Polyimide
      • 4.3.2.3 Isotropic Etch
      • 4.3.2.4 Spin Etch Planarization
      • 4.3.2.5 Electropolishing
  • 4.4 Chemical Mechanical Polishing (CMP)
    • 4.4.1 Background
    • 4.4.2 Research Efforts
    • 4.4.3 Advantages and Disadvantages
    • 4.4.4 Process Parameters
      • 4.4.4.1 STI Planarization
      • 4.4.4.2 Copper CMP
      • 4.4.4.3 Low-K Integration
      • 4.4.4.4 Defect Density
      • 4.4.4.5 Metrology

Chapter-5: Factory Automation Issues and Trends

  • 5.1 Introduction
  • 5.2 Elements of Automation
    • 5.2.1 Tool Automation
    • 5.2.2 Intrabay Automation
    • 5.2.3 Interbay Automation
    • 5.2.4 Material-Control System
  • 5.3 Flexible Automation
  • 5.4 Reliability
  • 5.5 Tool Issues and Trends
    • 5.5.1 Flexible Tool Interface
    • 5.5.2 Vacuum Robotics
    • 5.5.3 AGV
    • 5.5.4 CMP
    • 5.5.5 300-mm Wafer Transport
    • 5.5.6 Mini-Environments and Cleanroom Issues

Chapter-6: Thin film Deposition Issues and Trends

  • 6.1 Physical Vapor Deposition
    • 6.1.1 Sputtering Technology
    • 6.1.2 Plasma Technology
    • 6.1.3 Reactor Designs
      • 6.1.3.1 Long-Throw Deposition
      • 6.1.3.2 Collimated Sputter Deposition
      • 6.1.3.3 Showerhead Deposition
      • 6.1.3.4 Ionized PVD
  • 6.1.4 Semiconductor Processing
    • 6.1.4.1 Feature Patterning
    • 6.1.4.2 Gap Fill
  • 6.2 Chemical Vapor Deposition (CVD) Techniques
    • 6.2.1 APCVD
    • 6.2.2 LPCVD
    • 6.2.3 PECVD
    • 6.2.4 HDPCVD
    • 6.2.5 ALD

Chapter-7: Plasma Etching Issues and Trends

  • 7.1 Introduction
  • 7.2 Processing Issues
    • 7.2.1 Chlorine Versus Fluorine Processes
    • 7.2.2 Multilevel Structures
    • 7.2.3 New Metallization Materials
    • 7.2.4 GaAs Processing
  • 7.3 Plasma Stripping
    • 7.3.1 Photoresist Stripping
    • 7.3.2 Low-K Removal

Chapter-8: Cluster Tools Issues and Trends

  • 8.1 Definitions
  • 8.2 Device Technology and Integrated Processing
  • 8.3 Main Functional Units
    • 8.3.1 Central Handling Platform
    • 8.3.2 Cassette Stations
    • 8.3.3 Extension Modules
    • 8.3.4 Single Process Modules
    • 8.3.5 Batch Modules
    • 8.3.6 Multiple Process Modules
  • 8.4 Cluster Tool Communications
    • 8.4.1 Cluster Tool Controller
    • 8.4.2 Transport Module Controller
    • 8.4.3 Process Module Controller
    • 8.4.4 Control Software
    • 8.4.5 Human Interface Software
    • 8.4.6 Networking Software
  • 8.5 Vacuum System Design
  • 8.6 Trends
    • 8.6.1 Deposition - Plasma Etch
    • 8.6.2 Deposition - Rapid Thermal Processing
    • 8.6.3 Lithography - Resist Processing
    • 8.6.4 Diagnostics - Process
    • 8.6.5 CMP Polish - Clean

Chapter-9: Chemicals and Materials Issues and Trends

  • 9.1 Liquid Chemicals
    • 9.1.1 Acids and Solvents
    • 9.1.2 Resists
      • 9.1.2.1 Resist Materials
      • 9.1.2.2 Resist Strippers
  • 9.2 Purity Requirements
    • 9.2.1 Purification Methods
      • 9.1.1.1 Trends For Purity - Trace Elements
    • 9.2.2 Particulates
      • 9.2.2.1 Particulate Removal Techniques
      • 9.2.2.2 Particle Monitoring
  • 9.3 Chemical Management
  • 9.4 Gases
    • 9.4.1 Requirements
      • 9.4.1.1 Purification Alternatives
    • 9.4.2 Particulate Considerations
      • 9.4.2.1 Particle Monitoring
      • 9.4.2.2 Filtration Methods
    • 9.4.3 Summary
  • 9.5 Chemical Management
  • 9.6 Sputtering and Evaporation Materials
    • 9.6.1 Technology Issues
    • 9.6.2 Purity Requirements

Chapter-10: Contamination Issues and Trends

  • 10.1 Liquid Chemicals
    • 10.1.1 Purification Methods
    • 10.1.2 Particulates
      • 10.1.2.1 Effects on Yield
      • 10.1.2.2 Particle Removal
      • 10.1.2.3 Particle Monitoring
    • 10.1.3 Bulk Distribution vs Bottles
    • 10.1.4 Piping System Construction
      • 10.1.4.1 Materials of Construction
      • 10.1.4.2 Cost Analysis
  • 10.2 Gases
    • 10.2.1 Technology Issues
    • 10.2.2 Requirements
      • 10.2.2.1 Purification Alternatives
      • 10.2.2.2 Purity Trends
      • 10.2.2.3 Particulate Considerations
  • 10.3 Deionized Water
    • 10.3.1 Purification Specifications
    • 10.3.2 Purification Methods
    • 10.3.3 Purity Measurement Techniques
    • 10.3.4 Filtration and Ultrafiltration
    • 10.3.5 Piping System Construction
    • 10.3.6 DI Water System Costs
  • 10.4 Processing Equipment
    • 10.4.1 Detection Methods
    • 10.4.2 Removal Techniques

Chapter-11: Metrology

  • 11.1 Defect Review/Wafer Inspection
    • 11.1.2 Defect Review
      • 11.1.2.1 SEM Defect Review
      • 11.1.2.2 Optical Defect Review
      • 11.1.2.3 Other Defect Review
    • 11.1.3 Patterned Wafer Inspection
      • 11.1.3.1 E-Beam Patterned Wafer Inspection
      • 11.1.3.2 Optical Patterned Wafer Inspection
    • 11.1.4 Unpatterned Wafer Inspection
    • 11.1.5 Macro-Defect Inspection
  • 11.2 Thin Film Metrology
    • 11.2.1 Metal Thin-Film Metrology
    • 11.2.2 Non-Metal Thin-Film Metrology
    • 11.2.3 Substrate Metrology
  • 11.3 Lithography Metrology
    • 11.3.1 Overlay
    • 11.3.2 CD
    • 11.3.3 Mask (Reticle) Metrology/Inspection

Chapter-12: Market Forecast

  • 12.1 Market Drivers
    • 12.1.1 Semiconductor Market
    • 12.1.2 Technical Trends
    • 12.1.3 Economic Trends
    • 12.1.4 Geographic Trends
      • 12.1.1.1 China
      • 12.1.4.2 Asia
      • 12.1.4.3 Europe
      • 12.1.4.4 Japan
      • 12.1.4.5 United States
  • 12.2 Market Forecast Assumptions
  • 12.3 Low-K Market
  • 12.4 Lithography Market
  • 12.5 CMP Market
    • 12.5.1 CMP Polisher Market
    • 12.5.2 CMP Slurry Market
  • 12.6 Factory Automation Market
  • 12.7 Thin Film Deposition Market
    • 12.7.1 Chemical Vapor Deposition Market
    • 12.7.2 Physical Vapor Deposition Market
  • 12.8 Plasma Etching Market
  • 12.9 Cluster Tool Market
    • 12.9.1 Flexible Cluster Tool Market
    • 12.9.2 Non-Flexible Cluster Tool Market
  • 12.10 Chemical and Materials Market
    • 12.10.1 Forecast by Chemical and Material
    • 12.10.2 Market Shares
  • 12.11 Cleanroom and Contamination Market
  • 12.12 Metrology Market

FIGURES

  • 2.1 Interconnect Delay for Copper/Low-K
  • 3.1 Lithography Roadmap
  • 3.2 Lens Arrangement For Submicron Features
  • 3.3 Advanced Optical Lithography Scenarios
  • 3.4 Mix-and-Match Approaches
  • 3.5 High Index Refractive Materials
  • 3.6 EUV Lithography
  • 3.7 Illustration of X-Ray Lithography
  • 3.8 Schematic Of Scalpel Electron Beam System
  • 3.9 Multi-Source E-Beam Lithography
  • 3.10 Principles of LEEPL
  • 3.11 Ion Projection Lithography System
  • 3.12 Hermoplastic Nanoimprint Lithography Process
  • 3.13 Step And Flash Nanoimprint Lithography Process
  • 3.14 Mulith Reference Distribution Aerial Image Formation
  • 3.15 Schematic of Microlens
  • 3.16 Mapper Mask-Based Lithography
  • 3.17 Mapper Maskless Lithography
  • 3.18 CoO Value in DRAM Mass Production
  • 3.19 Lithography Costs for 40,000 Wafers/Mask
  • 3.20 Lithography Costs for 1,000 Wafers/Mask
  • 4.1 Planarization Lengths of Various Methods
  • 4.2 Normalized Removal Rates
  • 4.3 Reduced Complexity With Copper
  • 4.4 Copper Loss From CMP
  • 4.5 CMP Copper Process Technologies
  • 4.6 CMP Performance Improvements
  • 4.7 Polish Endpoint Control
  • 5.1 Material-Control System
  • 5.2 Traditional and Flexible Automated Material Handling System
  • 5.3 Overhead Monorail Delivery - Cassette in Box, Cassette in SMIF Pod
  • 5.4 Stocker Design and Interfaces
  • 6.1 Schematic Of Sputtering System
  • 6.2 Magnetron Sputtering Design
  • 6.3 Showerhead Reactor Design
  • 6.4 Ionized PVD
  • 6.5 APCVD Reactor
  • 6.6 Tube CVD Reactor
  • 6.7 HDPCVD Reactor
  • 6.8 ALD Versus PVD Copper Barrier
  • 7.1 Various Enhanced Designs (a) Helicon, (b) Multiple ECR, (c) Helical Resonator
  • 7.2 Schematic of Inductively Coupled Plasma Source
  • 7.3 Schematic of the HRe Source
  • 7.4 Schematic of the Dipole Magnet Source
  • 7.5 Schematic of Chemical Downstream Etch
  • 7.6 Silicon Trench Structure
  • 7.7 Dual Damascene Dielectric Etch Approaches
  • 8.1 Basic Cluster Tool Architecture
  • 8.2 Basic Cluster Tool Architecture
  • 8.3 Communications Architecture In A Cluster Tool
  • 9.1 Chemical Management Services Tasks
  • 9.2 ITRS Roadmap
  • 10.1 Relationship Between Device Yield and Particles
  • 10.2 Relationship Between Die Yield and Cost Size
  • 10.3 Sources of Particles
  • 11.1 Thin Film Metrology Challenges
  • 11.2 Spectroscopic Ellipsometry Diagram
  • 11.4 ITRS Overlay Technology Roadmap
  • 11.5 NIST Line Edge Roughness Model
  • 11.6 ITRS Metrology Roadmap
  • 11.7 Schematic Of OCD Optics
  • 11.8 Microlithography Process And Measurements
  • 12.1 Low-K Deposition Market Shares
  • 12.2 Worldwide Lithography Market Shares
  • 12.3 Semiconductor Equipment Utilization
  • 12.4 Market Shares of Automated Wafer Transfer Suppliers
  • 12.5 Worldwide MCVD Market Shares
  • 12.6 Worldwide DCVD Market Shares
  • 12.7 Worldwide PVD Market Shares
  • 12.8 Worldwide Market Shares for Dry Etch Equipment
  • 12.9 Distribution of Etch Sales by Type
  • 12.10 Market Forecast of Flexible Cluster Tools
  • 12.11 Market Shares of Flexible Cluster Tools
  • 12.12 Market Forecast of Non-Flexible Cluster Tools
  • 12.13 Market Shares of Non-Flexible Cluster Tools
  • 12.14 Worldwide Market Shares of Sputtering Target Suppliers
  • 12.15 Worldwide Market Shares of Liquid Chemical Suppliers
  • 12.16 Worldwide Market Shares of Photoresist Suppliers
  • 12.17 Worldwide Market Shares of Silicon Wafer Suppliers
  • 12.18 Worldwide Market Shares of Gas Suppliers
  • 12.19 Total Metrology Market Forecast
  • 12.20 Total Metrology Market Shares

TABLES

  • 2.1 Low-K Material Requirements
  • 2.2 Low-K Materials
  • 3.1 Lithography Requirements for IC Production
  • 3.2 Characteristics of X-Ray Systems
  • 3.3 Basic Conditions of CoO Model
  • 3.4 Calculation List of Lithography System Cost
  • 3.5 Throughput Estimation of X-Ray Lithography
  • 3.6 Cost of Reticle/X-Ray Mask
  • 3.7 Phase Shift Mask and X-Ray Mask Manufacturing
  • 4.1 Levels of Integration of Dynamic Rams
  • 4.2 Interconnect Levels of Logic Device
  • 4.3 Typical Process Specifications
  • 4.4 Organic Polymers for IMD Applications
  • 4.5 CMP Process Variables
  • 4.7 Optimized CMP and Post-CMP Clean Parameters
  • 4.8 Interconnect Materials by Segment
  • 7.1 Silicon Wafer Usage 2003 - 2009
  • 7.2 Plasma Source Comparison
  • 7.3 Typical Process Specifications
  • 7.4 Dry Resist Stripping Systems
  • 8.1 Model for DRAM Production Line
  • 9.1 Common Wafer Processing Chemicals
  • 9.2 Photoresist Stripping Solutions
  • 9.3 Wet Stripping Systems
  • 10.1 Advantages and Disadvantages of Various Cleaning Methods
  • 10.2 Chemical and Material Compatibility
  • 10.3 Piping System Economic Analysis for Positive Developer
  • 10.4 Gas Control System Issues
  • 10.5 Range of Purity of CVD Gases
  • 10.6 Potential Hazards of Processing Gases
  • 10.7 Particle Sources
  • 10.8 Location of In-Situ Monitors by Equipment Type
  • 11.1 Comparison Of White-Light With Multiple-Angle Laser Ellipsometry
  • 12.1 Worldwide Capital Spending 2007-2009
  • 12.2 Worldwide GDP997-2008
  • 12.3 Worldwide Market Forecast Low-K Market
  • 12.4 Worldwide Stepper Market
  • 12.5 Worldwide CMP Polisher Market
  • 12.6 Worldwide CMP Market Shares
  • 12.7 Worldwide CMP Slurry Market
  • 12.8 Worldwide Forecast of Automated Transfer Tools
  • 12.9 Worldwide CVD Market Forecast
  • 12.10 Worldwide PVD Market Forecast
  • 12.11 Worldwide Market Forecast of Plasma Etching Systems
  • 12.12 Worldwide Forecast of Chemicals and Materials
  • 12.13 Worldwide Wafer Fab Construction Spending Forecast
  • 12.14 Total Metrology Market Forecast
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