Silicon Photonics (2009 - 2014)

Table of Contents

1. Introduction

• 1.1. KEY TAKE AWAYS
• 1.2. REPORT DESCRIPTION
• 1.3. MARKETS COVERED
• 1.4. STAKEHOLDERS

2. Summary

3. Market overview

• 3.1. Defining the Silicon photonics market
• 3.2. Market Drivers
  • 3.2.1. Products are cheaper than conventional ones
  • 3.2.2. Low power consumption advantage
  • 3.2.3. Products are compact in size
  • 3.2.4. Need for high speed electronics
  • 3.2.5. The materials used are well understood
  • 3.2.6. Increase data transfer volume
• 3.3. Inhibitors
  • 3.3.1. Indirect band gap in silicon
  • 3.3.2. Slow modulation mechanism
  • 3.3.3. posibility of Thermal effect
  • 3.3.4. Pockel' s effect
  • 3.3.5. Silicon is still regarded as new optical material
• 3.4. Opportunities
  • 3.4.1. Optical modulation is possible
  • 3.4.2. It is possible to achieve V-grooves and hybrid technology
  • 3.4.3. High power devices
• 3.5. Top player analysis

4. Types of silicon photonic products

• 4.1. Silicon photonic waveguides
  • 4.1.1. Drivers
    • 4.1.1.1. Wide range of wavelengths
    • 4.1.1.2. Low bending loss of waves
    • 4.1.1.3. Better line-to-line resolution
    • 4.1.1.4. Other drivers of silicon photonic waveguides market
  • 4.1.2. Inhibitors
    • 4.1.2.1. Waveguides become bulky
    • 4.1.2.2. Fabrication difficulties
  • 4.1.3. Opportunities
    • 4.1.3.1. Monolithic waveguides
  • 4.1.4. Planar waveguides
  • 4.1.5. Strip waveguides
  • 4.1.6. Rib Waveguides
  • 4.1.7. Fiber waveguide
• 4.2. Silicon Optical Modulators
  • 4.2.1. Drivers
    • 4.2.1.1. Data transmission is faster than other modulators
    • 4.2.1.2. Better device packaging
    • 4.2.1.3. Low response time
    • 4.2.1.4. High resistivity to temperature change
  • 4.2.2. Inhibitors
    • 4.2.2.1. Performance depends on doping
    • 4.2.2.2. Critical dimensions are not tolerant
  • 4.2.3. Opportunities
    • 4.2.3.1. New device design approaches
    • 4.2.3.2. Key developments
  • 4.2.4. Absorptive modulators
    • 4.2.4.1. Technologies for Absorptive Modulators
    • 4.2.4.2. Franz-Keldysh Effect
    • 4.2.4.3. Quantum-Confined Stark Effect (QCSE)
    • 4.2.4.4. Plasma Dispersion Effect
  • 4.2.5. Refractive modulators
    • 4.2.5.1. Technologies for refractive silicon photonic modulators
    • 4.2.5.2. Electro-optic effect
    • 4.2.5.3. Magneto-optic effect
    • 4.2.5.4. Thermo-optic effect
    • 4.2.5.5. Polarization changes in liquid crystals
• 4.3. Silicon Optical Interconnects
  • 4.3.1. Drivers
    • 4.3.1.1. High interconnects capacity
    • 4.3.1.2. High interconnect density
    • 4.3.1.3. Overcome design issues
    • 4.3.1.4. Overcome timing issues
  • 4.3.2. Inhibitors
    • 4.3.2.1. Large diameters of optical fibers
    • 4.3.2.2. Opportunities
  • 4.3.3. Intra-chip Interconnects
  • 4.3.4. Inter-Chip interconnects
    • 4.3.4.1. Drivers
    • 4.3.4.2. Low connection losses
    • 4.3.4.3. No interference
    • 4.3.4.4. Inhibitors and opportunities
  • 4.3.5. Backplane interconnects
• 4.4. Wavelength Division Multiplexer Filters
  • 4.4.1. Drivers
    • 4.4.1.1. Straightforward fabrication
    • 4.4.1.2. High neighboring signal isolation
    • 4.4.1.3. Low polarization dependence
    • 4.4.1.4. High thermal stability
  • 4.4.2. Inhibitors
    • 4.4.2.1. Complex thin film growth
    • 4.4.2.2. Filter dependency on wavelengths
    • 4.4.2.3. Opportunity
• 4.5. Silicon LED
• 4.6. Silicon Photo detector
  • 4.6.1. Drivers
    • 4.6.1.1. Quick rise and fall times
    • 4.6.1.2. Wide spectral response
    • 4.6.1.3. Wide applications
    • 4.6.1.4. Large acceptance angle
  • 4.6.2. Inhibitors and opportunities
    • 4.6.2.1. Long absorption length
    • 4.6.2.2. Indiscriminate sensitivity to visible radiations

5. Product device

• 5.1. Silicon Optical Transceivers
  • 5.1.1. Drivers
    • 5.1.1.1. Low electrical power dissipation
    • 5.1.1.2. Increased transmission length
  • 5.1.2. Inhibitors
    • 5.1.2.1. Silicon Lasers cannot be implemented
  • 5.1.3. Opportunities
    • 5.1.3.1. On-chip photo detectors can bring down manufacturing costs
    • 5.1.3.2. Channel characteristics adaptable transceivers
• 5.2. Silicon Optical Switches
  • 5.2.1. Drivers
    • 5.2.1.1. Carrier injection not needed
    • 5.2.1.2. Low Switching Power
  • 5.2.2. Inhibitors and opportunities
• 5.3. Silicon photonic IC
  • 5.3.1. Drivers
    • 5.3.1.1. Higher functionality
    • 5.3.1.2. Low Weight
  • 5.3.2. Inhibitors
  • 5.3.3. Opportunities
• 5.4. Silicon photonic sensors
• 5.5. Silicon photonic photovoltaic cells/solar cells
  • 5.5.1. Drivers
    • 5.5.1.1. High energy conversion efficiency
    • 5.5.1.2. Easy device fabrication
    • 5.5.1.3. Less silicon needed
    • 5.5.1.4. Challenges and opportunities
• 5.6. Emerging silicon photonics product devices
  • 5.6.1. Silicon photonic lasers
  • 5.6.2. Silicon photonic amplifiers

6. Silicon photonics Applications

• 6.1. Telecommunications and Data Transfer
  • 6.1.1. Drivers
    • 6.1.1.1. Quick data transmission
    • 6.1.1.2. Reliable communication
    • 6.1.1.3. Increase in bandwidth
    • 6.1.1.4. Low power requirement
    • 6.1.1.5. Computing and telecommunication convergence
    • 6.1.1.6. No electromagnetic interference
    • 6.1.1.7. Cost reduction
    • 6.1.1.8. Increased integration level of devices
  • 6.1.2. Inhibitors
    • 6.1.2.1. Long-haul communication
  • 6.1.3. Opportunities
    • 6.1.3.1. Short-reach communications
    • 6.1.3.2. Fiber to the Home (FTTH) technology
  • 6.1.4. Optical fiber communications
    • 6.1.4.1. Drivers
    • 6.1.4.2. Inhibitors
    • 6.1.4.3. Opportunities
• 6.2. Information Processing
• 6.3. Sensors
• 6.4. Metrology
  • 6.4.1. Drivers
    • 6.4.1.1. On-chip entanglement
    • 6.4.1.2. Precise real time measurement
  • 6.4.2. Inhibitors and opportunities
  • 6.4.3. Time and frequency measurements
  • 6.4.4. Range finding
• 6.5. Displays and consumer electronics
• 6.6. Spectroscopy
• 6.7. Holography
• 6.8. Medicine
• 6.9. Military
• 6.10. Others
• 6.11. Emerging silicon photonics Applications
  • 6.11.1. Laser material processing
  • 6.11.2. Visual Art
  • 6.11.3. Robotics

7. Types of silicon structure

• 7.1. Introduction
• 7.2. Silicon wafering process
• 7.3. Single Crystal Silicon (Sc-Si)
  • 7.3.1. The Ribbon Silicon Process
    • 7.3.1.1. Applications
• 7.4. Multicrystalline Silicon (mc-Si)
• 7.5. Application and developments of multicrystalline silicon
• 7.6. Polycrystalline Silicon (pc-Si)
  • 7.6.1. Staebler-Wronski effect
  • 7.6.2. Applications of polycrystalline silicon
• 7.7. Microcrystalline Silicon (μc-Si)
• 7.8. Silicon based photonic crystal structures
  • 7.8.1. Market drivers
    • 7.8.1.1. Optically tunable structures
    • 7.8.1.2. Low pump power required
    • 7.8.1.3. Strong angular dispersion
  • 7.8.2. Inhibitors
    • 7.8.2.1. Discrepancy between experimental and theoretical results
  • 7.8.3. Opportunities
    • 7.8.3.1. New modulations devices and multiplexers
    • 7.8.3.2. Crystals are small and compact
  • 7.8.4. One-dimensional structures
  • 7.8.5. Two-dimensional structures
  • 7.8.6. Three-dimensional structures

8. Silicon Light Emissive Structures

• 8.1. Silicon nanocrystals
• 8.2. Epitaxial Growth
• 8.3. Wafer Bonding

9. Silicon growth techniques

• 9.1. Float Zone (FZ)
• 9.2. Czochralski' s Crystal growth
• 9.3. Directional solidification
• 9.4. Electromagnetic casting
• 9.5. Dendritic Web Method
• 9.6. Capillary Die Growth
• 9.7. Edge-Supported Pulling
• 9.8. Substrate Melt Shaping
• 9.9. Thin-Layer Silicon

10. Silicon-Photonics Integration Techniques

• 10.1. Silicon sub-mount technology
• 10.2. Silica/Silicon passive waveguide technology
• 10.3. Passive optical alignment

11. Geographical analysis

• 11.1. U.S. Silicon Photonics market
• 11.2. Europe Silicon Photonics market
• 11.3. asia Silicon Photonics market

12. Challenges in silicon-photonics

• 12.1. Intervalence band absorption
• 12.2. Auger Recombination
• 12.3. Hetero-barrier leakage

13. Company profiles

• 13.1. Bell Labs
• 13.2. Chiral Photonics Inc.
• 13.3. CyOptics
• 13.4. Enablence Technologies Inc.
• 13.5. Finisar Corporation
• 13.6. Hamamatsu Photonics, K.K.
• 13.7. Hewlett-Packard Co.
• 13.8. IBM Corp.
• 13.9. Infinera Inc.
• 13.10. Innolume
• 13.11. Intel
• 13.12. JDS Uniphase Corporation (JDSU)
• 13.13. Lightwire Inc
• 13.14. Luxtera, Inc
• 13.15. Oki Optical Components
• 13.16. STMicroelectronics
• 13.17. Sumitomo Mitsubishi Silicon Group (SUMCO) CORPORATION
• 13.18. Sun Microsystems
• 13.19. Translucent Inc

14. Patent Analysis

• 14.1. Appendix
  • 14.1.1. U.S. patent
  • 14.1.2. Europe patent
  • 14.1.3. Asia Patent