Abstract
Much has been published about GaN transistors but very few are available
commercially. MuAnalysis has taken apart the Cree CGH40010 GaN HEMT.
MuAnalysis has used a large variety of analytical techniques including,
electron microscopy with photochemical delineation, EDX and FTIR spectroscopy,
and emission microscopy to probe the insides of this transistors and reveal
what the datasheet does not mention.
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