Report: Gallium Nitride 2005 - Technology Status, Applications and Forecasts TOC

2.1 History/Initial Applications: 2.1.1 Crystal Growth; 2.1.2 Thin-Film Deposition; 2.1.3 P-type Doping; 2.1.4 Etch; 2.1.5 Contact Formation; 2.1.6 Band Structure; 2.1.7 GaN Blue LEDs
2.2 Basic Materials Properties: 2.2.1 Crystal Structure; 2.2.2 Bandgap; 2.2.3 Saturated Electron Drift Velocity; 2.2.4 Breakdown Electric Field; 2.2.5 Dielectric Constant; 2.2.6 Thermal Conductivity; 2.2.7 Coefficient of Thermal Expansion; 2.2.8 Radiation Hardness
2.3 Competing Materials/Figures of Merit: 2.3.1 Competing Materials; 2.3.2 Figures of Merit

3.1 Optoelectronics: 3.1.1 LEDs; 3.1.2 Laser Diodes; 3.1.3 UV Photodetectors; 3.1.4 UV Optical Sources
3.2 Electronic Devices: 3.2.1 Microwave Power; 3.2.2 High Temperature; 3.2.3 High Power

4.1 Status Update: 4.1.1 Substrates; 4.1.2 Deposited Film Composition/Quality; 4.1.3 P-type Doping; 4.1.4 Etching; 4.1.5 Contacts; 4.1.6 Packaging; 4.1.7 Historical Review
4.2 Substrates/Substrate Quality: 4.2.1 Sapphire; 4.2.2 SiC; 4.2.3 GaN; 4.2.4 AlN
4.3 Epitaxially Deposited GaN Films: 4.3.1 Current GaN Deposition Techniques; 4.3.2 LEO/ELOG; 4.3.3 Pendeoepitaxy; 4.3.4 Cantilever Epi Process; 4.3.5 Plasma-Assisted MBE/AP-MOCVD
4.4 Contacts: 4.4.1 Background; 4.4.2 Recent Results; 4.4.3 Research Centers with GaN Contact Activity
4.5 Etching of GaN: 4.5.1 Background; 4.5.2 Etch Update; 4.5.3 Etch Chemistries and Techniques; 4.5.4 Representative Companies, Universities, and Research Centers with GaN Etch Activity
4.6 Doping: 4.6.1 Background; 4.6.2 Representative Doping Activity Since 2003
4.7 Packaging: 4.7.1 Light Output; 4.7.2 LED Heat Transport and Thermal Design; 4.7.3 Power LED Packaging; 4.7.4 Representative Package Activity; 4.7.5 Emerging and Future Packaging Technologies; 4.7.6 Electronic Device Packaging
Addendum to Chapter 4: Substrate Suppliers

5.1 Optoelectronic Devices 5.1.1 Blue, Green, and White LEDs: 5.1.2 Blue/Violet Laser Diodes; 5.1.3 UV Photodectors and Emitters
5.2 Electronic Devices: 5.2.1 Record Performances Summary 5.2.2 Leading-Edge Performance Since 2003 and Excerpted Papers; 5.2.3 Power Devices Summary; 5.2.4 Microwave Power HEMTs; 5.2.5 Power GaN HEMTs on SiC; 5.2.6 Low-Noise HEMTs; 5.2.7 MESFETs; 5.2.8 Piezoelectric/Polarization Effects; 5.2.9 Heterojunction/Schottky Diode Rectifiers and Thyristors; 5.2.10 HBTs and BJTs; 5.2.11 Summary of Companies/Research Centers and Universities Active in GaN-Based Electronic Device Development

6.1 GaN - Related Industrial Activity: 6.1.1 North America; 6.1.2 Asia; 6.1.3 Europe; 6.1.4 Middle East and Africa
6.2 Universities/Research Centers Active in GaN Development: 6.2.1 North and South America; 6.2.2 Asia-Pacific; 6.2.3 Europe; 6.2.4 Middle East and Africa
6.3 GaN-Related Government Activities and Funding: 6.3.1 North America; 6.3.2 Asia; 6.3.3 Europe; 6.3.4 Australia
6.4 Mini-Profiles of Representative Companies Active in GaN Development: 6.4.1 U.S. Companies; 6.4.2 Asian Companies; 6.4.3 European Companies
6.5 Mini-Proiles of Universities Active in GaN Development
6.6 Mini-Profiles of Government Agencies Supporting GaN Development: 6.6.1 U.S.; 6.6.2 Taiwan
6.7 The Rise of GaN in Taiwan: GaN Development and Production Status
6.8 The Rise of GaN in China

7.1 Optoelectronics Applications: 7.1.1 Background; 7.1.2 Blue, Green, and White LEDs; 7.1.3 Laser Diodes; 7.1.4 UV Devices
7.2 Electronics Applications: 7.2.1 Overview; 7.2.2 Communications Systems; 7.2.3 Industrial; 7.2.4 Military/Aerospace; 7.2.5 Automotive; 7.2.6 Aircraft
7.3 Market Forecast, 2005-2009: 7.3.1 Optoelectronics; 7.3.2 Electronics BIBLIOGRAPHY

Gallium Nitride 2005 - Technology Status, Applications and Forecasts