Substrates for GaN-Based Devices: Performance Comparisons and Market Assessment - 2009

Table of Contents

1. EXECUTIVE SUMMARY

• 1.1 Introduction
  • 1.1.1 Report Objectives
• 1.2 Technology Summary
  • 1.2.1 Driving Forces for Change and Acceptance of Alternative Substrates
  • 1.2.2 Crystal Growth Summary
    • 1.2.2.1 Bulk Crystal Growth (GaN)
    • 1.2.2.2 Deposited Bulk Crystal Growth
    • 1.2.2.3 AlN True Bulk Crystal Growth
    • 1.2.2.4 SiC Bulk Crystal Growth
    • 1.2.2.5 Sapphire Bulk Crystal Growth
    • 1.2.2.6 Silicon Bulk Crystal Growth
  • 1.2.3 Summary of Device Performance Results as a Function of Substrate Type
• 1.3 Major Applications/Device Types (GaN-Related)
• 1.4 Companies and Universities/Research Centers Involved In Substrate Supply and Development
• 1.5 Market Forecast Summary
  • 1.5.1 Device Market Forecasts
  • 1.5.2 Substrate Market Forecasts
• 1.6 Summary and Conclusions
• 1.7 The Report

2. SUBSTRATE TECHNOLOGY STATUS UPDATE

• 2.1 Driving Forces for Substrate Choices (Sapphire, SiC, GaN, AlN, and Si)
• 2.2 Comparisons of Device Performance as a Function of Substrate Material
• 2.3 Summary of Substrate Materials with Respect to Appropriate Products and Applications
• 2.4 Crystal Growth
  • 2.4.1 Bulk Sapphire Crystal Growth
  • 2.4.2 SiC Bulk Crystal Growth
  • 2.4.3 Bulk Growth of SiC (Summary)
  • 2.4.4 GaN Crystal Growth
    • 2.4.4.1 GaN Bulk Crystal Growth
    • 2.4.4.2 Deposited GaN Substrates
  • 2.4.5 AlN Crystal Growth
    • 2.4.5.1 Sublimation-Recondensation
    • 2.4.5.2 Ammonothermal Synthesis of AlN Crystals
    • 2.4.5.3 PVT Seeded Growth - NCSU
    • 2.4.5.4 HexaTech
    • 2.4.5.5 Modified Physical Vapor Transport (PVT)
    • 2.4.5.6 Major Driving Forces for the Selection of AlN vs. GaN Substrates
  • 2.4.6 Si Substrates
    • 2.4.6.1 Bulk Si Crystal Growth
• 2.5 Composite Substrates (SopSiC and SiCopSiC)
• 2.6 Nonpolar Substrates
  • 2.6.1 Nonpolar Definitions
  • 2.6.2 Nonpolar Development
  • 2.6.3 Green Semipolar LEDs Grown by MOCVD on a Semipolar GaN Template
  • 2.6.4 Nonpolar Green LDs for Laser TV
  • 2.6.5 Control of Polarity of GaN Films on c-Plane Sapphire
  • 2.6.6 A Comparison of Performance, Morphology, and Defect Density of Nonpolar a-Plane- and m-Plane-Based LEDs
• 2.7 Diamond Substrates
• 2.8 Basic Substrate Materials Properties
  • 2.8.1 Crystal Structure
  • 2.8.2 Bandgap
  • 2.8.3 Electron Saturated Drift Velocity
  • 2.8.4 Breakdown Electric Field
  • 2.8.5 Dielectric Constant
  • 2.8.6 Thermal Conductivity
  • 2.8.7 Coefficient of Thermal Expansion (CTE)
  • 2.8.8 Lattice Mismatch with Deposited GaN Films
• 2.9 Figures of Merit
• 2.10 Performance and Reliability Comparisons as a Function of Substrate Material
  • 2.10.1 Performance Comparisons - Substrates and Other Variables
  • 2.10.2 Historical (Prior to 2008)
  • 2.10.3 Status Update (2008-2009)

3. MAJOR APPLICATIONS OF GaN DEVICES

4. DIRECTORY AND PROFILES OF ORGANIZATIONS ACTIVE IN SUBSTRATE PRODUCTION AND DEVELOPMENT

• 4.1 Companies Active in Substrate Production and Development
  • 4.1.1 Sapphire
  • 4.1.2 SiC
  • 4.1.3 GaN
  • 4.1.4 AlN
  • 4.1.5 GaN-on-Si
  • 4.1.6 Silicon
• 4.2 Research Centers and Universities Active in Substrate Development
  • 4.2.1 SiC
  • 4.2.2 GaN
  • 4.2.3 AlN
  • 4.2.4 GaN-on-Si
• 4.3 Government Agencies Supporting III-Nitride Activity, Including Bulk and Deposited Crystal Growth
  • 4.3.1 North America
    • 4.3.1.1 Canada
    • 4.3.1.2 Mexico
    • 4.3.1.3 U.S.
  • 4.3.2 Asia
    • 4.3.2.1 Japan
    • 4.3.2.2 People' s Republic of China
    • 4.3.2.3 Singapore
    • 4.3.2.4 South Korea
    • 4.3.2.5 Taiwan
  • 4.3.3 Europe
    • 4.3.3.1 Belarus
    • 4.3.3.2 France
    • 4.3.3.3 Germany
    • 4.3.3.4 Italy
    • 4.3.3.5 Lithuania
    • 4.3.3.6 The Netherlands
    • 4.3.3.7 Poland
    • 4.3.3.8 Russia
    • 4.3.3.9 Spain
    • 4.3.3.10 Sweden
    • 4.3.3.11 Switzerland
    • 4.3.3.12 United Kingdom
  • 4.3.4 Australia
• 4.4 Mini-Profiles of Representative Organizations Supplying Substrates or Active in their Development
  • 4.4.1 U.S.
  • 4.4.2 France
  • 4.4.3 Germany
  • 4.4.4 Poland
  • 4.4.5 Russia
  • 4.4.6 Japan

5. MARKET FORECASTS

• 5.1 GaN-Based Device Market Forecasts
  • 5.1.1 Optoelectronic Devices
    • 5.1.1.1 High-Brightness LEDs
    • 5.1.1.2 Laser Diodes
  • 5.1.2 Electronic Devices
• 5.2 Substrate Market Forecasts
  • 5.2.1 Sapphire
  • 5.2.2 SiC Substrates
    • 5.2.2.1 SiC Market Forecast Assumptions
  • 5.2.3 GaN Substrates
    • 5.2.3.1 GaN Substrate Market Forecasts
  • 5.2.4 AlN Substrates
    • 5.2.4.1 AlN Substrate Market Forecasts
  • 5.2.5 Silicon Substrates

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