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Market Research Report

CS Materials' 08: A comprehensive survey on material usage and markets for GaAs, InP, SiC,Sapphire and GaN

Published by Yole Developpement Contact us : +1-860-674-8796
Published 2008/03 Content info PowerPoint file of 164+ slides
Product code YD63674
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Description TOC

Abstract

For more than 20 years, silicon pure players have been looking at those "strange" semiconductor materials made of a compound of 2 or more metals, wondering if it could be, one day, a threat for their existing business. Material makers are seeking new business opportunities outside of silicon and equipment suppliers are open to adapt their know-how and expand their product portfolio.

Silicon largely dominates the semiconductor business as the reference material. However, specific applications such as optoelectronics, RF or power electronics require material properties that cannot be offered by silicon. GaN, GaAs, InP, SiC and Sapphire substrates now account for only 0.6% of the 8,630 million square inches annually processed in semicon fabs. However, that small portion of processed area is compensated by a higher merchant price leading to a $800M market size in 2007, reaching the billion dollar threshold by 2009 - 2010.

GaAs has been the leading material in volume thanks to the wireless technology demand, but SiC and sapphire are now benefiting from the booming LED business.

Bulk GaN is becoming the winning choice for blue laser diode makers.

InP is still in the race expecting a strong rebound of the optical fibre demand.

Up to now, these materials have been protected from silicon competition, allowing device performance not reachable by THE semiconductor material (Frequency, power, thermal conductivity, robustness, junction temperature, voltage breakdown...). However, compound materials exhibit market prices dramatically higher than Si. This situation pushes the device developers to do "as well as" the compounds but using silicon. Bill Of Material is, and will remain, the main market driver for the adoption of these CS substrates and related technologies.

All the considered materials are now available in a 4 inch format except bulk GaN that has just been released in 3 inch in Japan. This diameter expansion helps to lower the manufacturing cost of CS-based devices and to mass market affordable products.

This report offers a unique panorama of the compound semi material business in a single package. It highlights the main metrics and the key market trends that will help material and equipment vendors to position their R&D efforts and anticipate the changes and forecasted evolution of their business.

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