Plasma Etching: Market Analysis and Strategic Issues

Table of Contents

Chapter 1 Introduction

• 1.1 The Need For This Report

Chapter 2 Executive Summary

• 2.1 Summary of Technical Issues
• 2.2 Summary of User Issues
• 2.3 Summary of Supplier Issues
• 2.4 Summary of Market Forecasts

Chapter 3 Technical Issues and Trends

• 3.1 Introduction
• 3.2 Processing Issues
  • 3.2.1 Chlorine Versus Fluorine Processes
  • 3.2.2 Multilevel Structures
  • 3.2.3 New Materials
  • 3.2.4 GaAs Processing
• 3.3 Plasma Stripping
  • 3.3.1 Photoresist Stripping
  • 3.3.2 Low-K Removal
• 3.4 Safety Issues
  • 3.4.1 System Design Considerations
  • 3.4.2 Gas Handling
  • 3.4.3 Reactor Cleaning

Chapter 4 Market Forecast

• 4.1 Influence of Technology Trends on the Equipment Market
• 4.2 Market Forecast Assumptions
• 4.3 Market Forecast

Chapter 5 Strategic Issues: Users

• 5.1 Evaluating User Needs
  • 5.1.1 Device Architecture
  • 5.1.2 Wafer Starts and Throughput Requirements
  • 5.1.3 Wafer Size
• 5.2 Benchmarking a Vendor
  • 5.2.1 Pricing
  • 5.2.2 Vendor Commitment and Attitudes
  • 5.2.3 Vendor Capabilities
  • 5.2.4 System Capabilities
• 5.3 Cost Analysis
  • 5.3.1 Equipment Price
  • 5.3.2 Installation Costs
  • 5.3.3 Maintenance Costs
  • 5.3.4 Sustaining Costs
  • 5.3.5 Hidden Costs
• 5.4 User - Supplier Synergy
  • 5.4.1 Feedback During Equipment Evaluation
  • 5.4.2 Feedback During Device Production

Chapter 6 Strategic Issues: Suppliers

• 6.1 Competition
• 6.2 Customer Interaction
  • 6.2.1 Customer Support
  • 6.2.2 Cleanroom Needs in the Applications Lab
• 6.3 Equipment Compatibility in Class 1 Cleanrooms
  • 6.3.1 Footprint Versus Serviceability
  • 6.3.2 Particulate Generation
  • 6.3.3 Automation
  • 6.3.4 300-mm Tools

FIGURES

• 3.1 Various Enhanced Designs (a) Helicon, (b) Multiple ECR, (c) Helical Resonator
• 3.2 Schematic of Inductively Coupled Plasma Source
• 3.3 Schematic of the HRe Source
• 3.4 Schematic of the Dipole Magnet Source
• 3.5 Schematic of Chemical Downstream Etch
• 3.6 Silicon Trench Structure
• 3.7 Dual Damascene Dielectric Etch Approaches
• 4.1 Trends in Minimum Feature Size for Dynamic RAMS
• 4.2 Market Shares for Dry Etch Equipment
• 4.3 Market Shares for Strip Equipment
• 4.4 Distribution of Etch Sales by Type
• 4.5 Distribution of Etch Sales by Device
• 4.6 Geographical Distribution of Equipment Purchases
• 5.1 Typical First Year Single Wafer System Cost Analysis
• 6.1 Relationship Between Device Yield and Particles
• 6.2 Sources of Particles
• 6.3 Relationship Between Die Yield and Chip Size

TABLES

• 3.1 Silicon Wafer Usage
• 3.2 Plasma Source Comparison
• 3.3 Typical Process Specifications
• 3.4 Dry Resist Stripping Systems
• 4.1 Worldwide Dry Etch Market Shares
• 4.2 Worldwide Dry Strip Market Shares
• 4.3 Worldwide Market Forecast of Plasma Etching Systems
• 4.4 Distribution of Etch Sales by Device by Vendor
• 4.5 Number of Layers To Be Etched
• 4.6 Distribution of Wafer Starts
• 4.7 Feature Sizes of Equipment Capabilities
• 5.1 Levels of Integration of Dynamic Rams
• 5.2 Interconnect Levels of Logic Devices
• 6.1 0.18ƒÊm Etch Process Specifications