Printed and Thin Film Transistors and Memory 2008-2028

Table of Contents

1. INTRODUCTION

• 1.1. Importance of printed and potentially printed electronics
  • 1.1.2. Awesome new capability creates new markets
  • 1.1.3. This is the new printing before it is the new electronics
  • 1.1.4. Importance of flexibility, light weight and low cost
  • 1.1.5. Creating radically new products
  • 1.1.6. Improving existing products
• 1.2. Importance of printed and thin film transistors and memory
  • 1.2.1. Vision for the future
  • 1.2.2. Benefits of thin film transistors and memory
• 1.3. Transistor basics and value chain
  • 1.3.1. How a transistor works
  • 1.3.2. TFTC value chain
• 1.4. Transistor geometry and parameters
  • 1.4.1. Conventional geometry - horizontal transistors
  • 1.4.2. New vertical geometry - vertical VFETs
  • 1.4.3. New geometry - single layer transistors Plastic E Print
  • 1.4.4. On off ratio and leakage current
  • 1.4.5. Frequency, carrier mobility and channel length
• 1.5. Choice of materials for these transistors
  • 1.5.1. The thin film transistors on the back of today' s LCD TV - a dead end?
  • 1.5.2. Organic vs inorganic materials
• 1.6. Choice of semiconductor
  • 1.6.2. Organic semiconductors
  • 1.6.3. Silicon is a dead end?
  • 1.6.4. Compound inorganic semiconductors
  • 1.6.5. CMOS and the n type difficulty
  • 1.6.6. Ambipolar semiconductors
  • 1.6.7. Carbon nanotubes as thin film semiconductors
  • 1.6.8. Importance of the dielectric layer
  • 1.6.9. Importance of codeposition
  • 1.6.10. Memory basics and value chain
• 1.7. Substrates
  • 1.7.1. High temperature and protective substrates vs low cost flexible
  • 1.7.2. Polymers
  • 1.7.3. Paper
• 1.8. Printing processes
  • 1.8.1. Requirements
  • 1.8.2. Ink jet vs fast reel to reel printing
  • 1.8.3. Transfer printing of single crystals

2. ORGANIC TRANSISTORS AND MEMORY - DEVELOPMENTS

• 2.1. History and prospective benefits
• 2.2. PolyApply program of the European Commission
• 2.3. RFID labels from Poly IC
• 2.4. Lowest performance, lowest cost - ACREO
• 2.5. Organic dielectrics and ferroelectrics

3. INORGANIC COMPOUND TRANSISTORS - DEVELOPMENTS

• 3.1. History and summary of potential benefits
• 3.2. Semiconductors
  • 3.2.1. Zinc oxide based transistor semiconductors
  • 3.2.2. Amorphous InGaZnO
  • 3.2.3. Transfer printing silicon, GaN and GaAs on film
  • 3.2.4. Tin disulphide
• 3.3. Inorganic dielectrics in devices
  • 3.3.1. Solution processed barium titanate nanocomposite
  • 3.3.2. Hafnium oxide and HafSOx
  • 3.3.3. Hybrid inorganic dielectrics - zirconia
  • 3.3.4. Aluminium, lanthanum, tantalum and other oxides
• 3.4. Chromium based technology

4. TECHNOLOGY AND SUPPLIERS - LARGE MEMORY

• 4.1. Types of memory
• 4.2. Big difference in making small vs large memory
• 4.3. Strategy of various developers of thin film and printed memory
  • 4.3.2. Thin Film Electronics TFE memory

5. TECHNOLOGY AND SUPPLIERS -CONDUCTORS

• 5.1. Organic vs inorganic conductors
• 5.2. Organic conductors
• 5.3. Inorganic conductors
  • 5.3.2. Comparison of metal options
  • 5.3.3. Polymer - metal suspensions
  • 5.3.4. Silver solution
• 5.4. Carbon nanotubes

6. MARKETS 2007-2027

• 6.1. Forecasts 2007-2027
• 6.2. Assumptions for our forecasts
• 6.3. Split between backplane, RFID and other applications to 2017
• 6.4. Size of relevant markets that are impacted
• 6.5. Potential for non-RFID electronic labels
• 6.6. Potential for RFID labels 2007-2017
• 6.7. Market for RFID
  • 6.7.2. Ultimate potential for highest volume RFID
  • 6.7.3. Penetration of chipless RFID
• 6.8. Impact on silicon
• 6.9. Forecasts for materials
• 6.10. Impediments to the commercialisation of printed transistors and memory

7. COMPARISON OF ORGANISATIONS INVOLVED IN TFTCS AND THEIR MATERIALS

• 7.1. Semiconductor, process, geometry, targets, challenges and objectives for 80 organisations in printed and thin film transistors and/ or memory
• 7.2. Profiles of 100 organisations in printed and thin film transistors and/ or memory
  • 7.2.1. 3M
  • 7.2.2. ACREO
  • 7.2.3. Asahi Kasei
  • 7.2.4. Asahi Glass
  • 7.2.5. AU Optoelectronics
  • 7.2.6. BASF
  • 7.2.7. Canon
  • 7.2.8. CEA Liten
  • 7.2.9. Chinese Academy of Sciences
  • 7.2.10. DialMat
  • 7.2.11. DaiNippon Ink and Chemical
  • 7.2.12. Dow Chemical
  • 7.2.13. Ecole Superiure des Mines Saint Etienne
  • 7.2.14. ETRI
  • 7.2.15. Evident Technologies
  • 7.2.16. Fraunhofer Institute for Photonic Microsystems
  • 7.2.17. Fraunhofer Institute for Reliability and Microintegration
  • 7.2.18. Fuji Electric Holdings
  • 7.2.19. Fujitsu
  • 7.2.20. H.C.Starck
  • 7.2.21. Hewlett Packard
  • 7.2.22. Hitachi
  • 7.2.23. Idemitsu Kosan
  • 7.2.24. Impika
  • 7.2.25. Industrial Technology Research Institute
  • 7.2.26. Innos
  • 7.2.27. Institute of Microelectronics
  • 7.2.28. International University of Bremen
  • 7.2.29. Japan Science and Technology Agency
  • 7.2.30. John Hopkins University
  • 7.2.31. Konica Minolta
  • 7.2.32. Korea Electronics Technology Institute
  • 7.2.33. Korea Research Institute of Chemical Technology
  • 7.2.34. Korea Institute of Science and Technology
  • 7.2.35. Kovio
  • 7.2.36. Kyoto University
  • 7.2.37. Kyushu University
  • 7.2.38. Kyung Hee University
  • 7.2.39. LG Chem
  • 7.2.40. LG Philips LCD
  • 7.2.41. Liebnitz Institute for Solid State and Materials Research (IFW)
  • 7.2.42. Luminescence Technology Corporation
  • 7.2.43. Matsushita
  • 7.2.44. Merck Chemicals
  • 7.2.45. Motorola
  • 7.2.46. Nanyang Technological University
  • 7.2.47. NanoMas Technologies
  • 7.2.48. National Institute of Advanced Industrial Science and Technology
  • 7.2.49. National Institute for Materials Science
  • 7.2.50. National Chiao Tung University
  • 7.2.51. National Taiwan University
  • 7.2.52. NHK
  • 7.2.53. Northwestern University
  • 7.2.54. Optoelectronic Industry and Technology Development Association
  • 7.2.55. ORFID
  • 7.2.56. Organic ID
  • 7.2.57. Oregon State University
  • 7.2.58. Osaka University
  • 7.2.59. Palo Alto Research Center
  • 7.2.60. Panipol
  • 7.2.61. Paru
  • 7.2.62. Philips
  • 7.2.63. Pioneer
  • 7.2.64. Plastic E Print
  • 7.2.65. Plastic Logic
  • 7.2.66. Plextronics
  • 7.2.67. Polyera
  • 7.2.68. Poly IC
  • 7.2.69. Princeton University
  • 7.2.70. Purdue University
  • 7.2.71. Rieke Metals
  • 7.2.72. Ricoh
  • 7.2.73. Riken Low Temperature Physics Laboratory
  • 7.2.74. Samsung
  • 7.2.75. Samsung Advanced Institute of Technology SAIT
  • 7.2.76. Seiko Epson
  • 7.2.77. Epson Cambridge Laboratory,
  • 7.2.78. Semiconductor Energy Laboratory
  • 7.2.79. Semprius
  • 7.2.80. Seoul National University
  • 7.2.81. Sharp
  • 7.2.82. Solvay
  • 7.2.83. Sony
  • 7.2.84. Spansion
  • 7.2.85. ST Microelectronics
  • 7.2.86. Sunchon National University
  • 7.2.87. Sumitomo Chemical
  • 7.2.88. Technical University of Braunschweig
  • 7.2.89. Technical University of Darmstadt
  • 7.2.90. Thin Film Electronics
  • 7.2.91. Tohoku University
  • 7.2.92. Tokyo Institute of Technology
  • 7.2.93. Toppan Printing
  • 7.2.94. Unidym
  • 7.2.95. University of California Los Angeles
  • 7.2.96. University of Cambridge
  • 7.2.97. University of Chemnitz
  • 7.2.98. University of Groningen
  • 7.2.99. University of Tokyo
  • 7.2.100. Xerox
  • 7.2.101. Other players in this value chain

APPENDIX 1: IDTECHEX PUBLICATIONS AND CONSULTANCY

APPENDIX 2: GLOSSARY

TABLES

• 1.1. Envisaged benefits of TFTCs in RFID and other low-cost applications when compared with envisaged silicon chips
• 1.2. Typical carrier mobility in different potential TFTC semiconductors (actual and envisaged)
• 1.3. Properties of the Polyera/ BASF n type printing ink for organic field effect transistors consisting of N,N Dioctyl-dicyanoperylene-3,4:9,10-bis(dicarboxyamide), PD18-CN2
• 2.1. Printable polymer transistor dielectric PE-DI-1900 from BASF and Polyera
• 3.1. A summary of the promised benefits of polymer ink used in pilot production of organic transistors vs two thin film inorganic semiconductors for transistors vs nanosilicon ink
• 3.2. Some properties of new thin film dielectrics
• 4.1. Some of the small group of contestants for large capacity printed memory.
• 5.1. Benefits and challenges of organic vs inorganic conductors for printed and thin film transistors, memory and their interconnects.
• 5.2. Conductance in ohms per square for the different printable conductive materials compared with bulk metal
• 5.3. Examples of ink suppliers progressing printed RFID antennas etc
• 5.4. Some companies progressing ink jettable conductors
• 5.5. Comparison of metal etch (e.g. copper and aluminium) conductor choices
• 5.6. Electroless metal plate - Additive print process with weakly conductive ink (e.g. plastics or carbon) followed by wet metal plating
• 5.7. Electro metal plate - Additive print process with weakly conductive ink (e.g. plastics or carbon) followed by dry metal plating
• 5.8. Printable metallic conductors cure at LT e.g. silver based ink
• 5.9. A typical process cost comparison for RFID antennas
• 5.10. Possibilities for various new printed conductors.
• 5.11. Charge carrier mobility of carbon nanotubes compared with alternatives
• 6.1. Global market for printed electronics logic and memory 2007-2027 in billions of dollars, with % printed and % flexible
• 6.2. Primary assumptions of organic electronics in full production 2007 to 2025
• 6.3. Global electronics industry by application
• 6.4. End user markets relevant to printed electronics
• 6.5. Global semiconductor shipments monthly and three month average 1983 to 2005
• 6.6. Statistics for electronic labels and their potential locations
• 6.7. Number (in millions) of tags by application 2007-2017
• 6.8. Total value of tags by application 2007-2017 (US Dollar Millions)
• 6.9. Choices of digital chipless RFID technologies
• 6.10. Chipless versus Chip RFID, in numbers of units (billions)
• 6.11. Market size of a variety of chipless solutions, $ millions
• 6.12. Scope for printed TFTCs to create new markets or replace silicon chips
• 7.1. Objectives and challenges of 80 organisations developing printed and potentially printed transistor and/ or memory circuits and/or their materials
• 7.2. Objectives and challenges of 23 organizations developing inks and their materials for printed and potentially printed transistors and memory
• 7.3. 42 organisations that developing TFTCs and their materials and their priorities for products to be sold
• 7.4. Typical quantum dot materials from Evident and their likely application.
• 7.5. Other players in the value chain

FIGURES

• 1.1. Growth in sales of silicon chips by value compared with growth in sales of printed and thin film electronic components.
• 1.2. Examples of the radically new capabilities of printed electronics.
• 1.3. Types of early win and longer term project involving printed electronics 1995-2025
• 1.4. Logic circuits printed by PolyIC in Germany using a reel to reel process
• 1.5. Plastic film scanner
• 1.6. The value chain for manufacturing of printed electronics
• 1.7. Value chain for TFTCs and examples of migration of activity for players
• 1.8. Traditional geometry for a field effect transistor
• 1.9. Vertical organic field effect transistor VOFET showing a short channel length and a large cross section for current flow. The substrate is shown at the bottom.
• 1.10. ORFID view of the problems of the traditional horizontal transistor
• 1.11. Examples of vertical transistors
• 1.12. ORFID VOFET approach
• 1.13. The Plastic E print process
• 1.14. Structure of SSD diode and device operation
• 1.15. Principle of self aligned printing by Plastic Logic
• 1.16. Prevalence of organic vs inorganic materials in printed and thin film electronics today
• 1.17. PEDOT:PSS
• 1.18. Motorola summary of thin film FET issues concerning the dielectric layer .
• 1.19. Motorola view of available gate materials
• 1.20. The simple capacitor like structure for many printed devices including memory
• 1.21. Choices of substrate for printed electronics
• 1.22. Change in stiffness of PET vs PEN substrate material with temperature.
• 1.23. Biaxially oriented crystalline film
• 1.24. Factors influencing film choice- property set
• 1.25. Some candidate materials for flexible substrates
• 1.26. Requirements in printing thin film transistors
• 1.27. The big picture for printing transistors and memory in ever increasing numbers
• 1.28. Reel to reel printing of transistors and complete RFID labels by Poly IC
• 1.29. Options for high speed, low-cost printing of TFTCs
• 1.30. Choice of printing technology for silver RFID antennas today, where Omron and Avery Dennison use gravure despite volumes being no more than hundreds of millions.
• 1.31. Performance improvement in thermal ink jet over the years.
• 1.32. Benefits of ink jet printing of electronics
• 1.33. Thermal ink jet printed transistor evolution
• 1.34. Hybrid process improves performance
• 1.35. Transfer printed GaAs FETs on PET
• 1.36. Semprius opportunity space
• 2.1. Reel to reel printing of TFTCs
• 2.2. ACREO technology platform
• 2.3. Components of the ACREO low functionality approach to transistors
• 2.4. ACREO electrochemical transistors
• 2.5. Electrochemical components electrical effects
• 2.6. ACREO electrochemical transistors
• 2.7. ACREO objectives for electrochemical transistor circuits
• 2.8. ACREO electrochemical timer transistor
• 2.9. ACREO matrix addressed display.
• 2.10. Interactive games printed on paper
• 2.11. Concept demonstrator integrating printed electrochemical components and its patented "Dry Phase Patterning" of metal conductors.
• 2.12. ACREO applicational ideas
• 3.1. Early Hewlett Packard work on ink jet printing of inorganic compound semiconductors
• 3.2. Printed flexible inorganic semiconductor
• 3.3. Transparent transistor
• 3.4. Material choices for transparent transistors
• 3.5. Amorphous thin film inorganic dielectric
• 3.6. Example of ZnO based transistor circuit that is transparent.
• 3.7. Using a nanolaminate as an e-platform
• 3.8. TEM images of solution processed nanolaminates
• 3.9. Cross-sectional schematic view of an amorphous oxide TFT
• 3.10. Transparent and flexible active matrix backplanes fabricated on PEN films
• 3.11. Semprius transfer printing
• 3.12. Motorola high permittivity printable OFET dielectric using a barium titanate organic nanocomposite.
• 3.13. Hybrid organic-inorganic transistor and right dual dielectric transistor
• 3.14. Motorola high permittivity printable OFET dielectric using a barium titanate organic nanocomposite.
• 3.15. Motorola results - the nanotechnology used
• 3.16. Lower operating voltage
• 3.17. NHK transistor on polycarbonate film with tantalum oxide gate.
• 4.1. An all-organic permanent memory transistor
• 4.2. TFE memory compared with the much more complex DRAM in silicon
• 4.3. Structure of TFE memory
• 4.4. TFE priorities for commercialisation of mega memory
• 5.1. InkTec soluble silver inks. Left: Transparent Electronic Ink. Right: Transparent Inkjet Inks
• 5.2. Patterning using InkTec ink
• 5.3. Properties and morphology of single walled carbon nanotubes
• 6.1. Global market for printed electronics logic and memory 2007-2027 in billions of dollars, with the percentage that will be printed and the percentage that will be flexible
• 6.1. Organic semiconductor projection by IBM
• 6.2. Sales of printed and potentially printed transistors and memory by application in 2010
• 6.3. Sales of printed and potentially printed transistors and memory by application in 2013.
• 6.4. Sales of printed and potentially printed transistors and memory by application in 2013
• 6.5. Potential, in billions yearly, for global sales of RFID labels and circuits printed directly onto products or packaging. Item level is shown in red. These are examples.
• 7.1. Fujitsu "electronic paper" display
• 7.2. Researchers and users play major roles with active logistic support from JST
• 7.3. High Mobility OTFT
• 7.4. Summary and Conclusion
• 7.5. LG Chemical spun-off into LG Chem Investment (LGCI), LG Chem and LG Household & Healthcare.
• 7.6. NanoMas technology
• 7.7. PARC have developed innovative displays
• 7.8. Materials and devices. Fully printed RFID tag in development.
• 7.9. Fully printed EAS (anti theft) tag shown on website.
• 7.10. Left is diode logic OR gate and the right is a bridge rectifier
• 7.11. Micrograph of an SSD array and the 110 GHz microwave measurement setup
• 7.12. Prototype HF tag and reader
• 7.13. 10 nm holes and 40 nm pitch in PMMA fabricated by nanoimprint lithography
• 7.14. The first room-temperature silicon single electron memory.
• 7.15. Samsung OLED display
• 7.16. A circuit by Associate Professor Zhenan Bao.