Abstract
Gallium nitride-based electronic devices are finally commercial, years after
the success of GaN-based LEDs and lasers. Electronic devices based on GaN is
the superior technology for many applications in high-power RF, high-voltage
and high-power electronics, and high-temperature environments. But, without a
volume application to drive down the manufacturing cost, the price remains
high. That may now change, as GaN device suppliers eye WiMAX base station
power amplifiers and other applications as volume markets drive lower costs.
Strategies Unlimited is pleased to offer this update of the GaN electronics
market, with special emphasis this year on application trends and pricing. We
offer a model for projecting future prices, along with three possible
scenarios. One scenario assumes that breakthroughs in epitaxy quality lead to
one pricing path and some volume applications. Another assumes a more moderate
pricing path, with some selective successes. A third assumes that pricing will
continue more or less as the status quo, with only moderate growth but
lucrative niche products.
Highlights
R&D ISSUES AND TECHNOLOGY DEVELOPMENTS are reviewed along with the
status of the technology emphasizing major breakthroughs that have occurred.
Research activities are highlighted for deposited and bulk crystal growth for:
Key applications include:
- Microwave Communications
- Power Electronics
- High-Temperature Environments
- Military and Space
- Aircraft and Automotive
- Industrial
- Consumer
MARKET FORECAST of the worldwide wide bandgap electronics component
market for 2007-2012.
MAJOR INDUSTRIAL SUPPLIERS and potential suppliers are profiled.
UNIVERSITIES/RESEARCH CENTERS with active substrate development
programs are identified with key contacts noted.
GOVERNMENT AGENCIES promoting substrate development are listed.
A BIBLIOGRAPHY with references to some of the most significant advances
in GaN, SiC, and AlN material and device technology since 2005 is presented.
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