Abstract
Description
The need for high power, high frequency transistors is increasing steadily,
commensurate with the huge demand for wireless telecommunications. More power,
more frequency bands, better linearity and improved efficiency are driving the
current development of RF semiconductor devices capable of handling all these
specifications at a reasonable price.
Up to 2005, Si LDMOS covered about 90% of the high power RF amplification
applications in the 2GHz and higher frequency range; the 10% remaining market
share was addressed by GaAs pHEMT technology. This equilibrium is soon to be
upset considerably by the introduction of Gallium Nitride (GaN) HEMT
technology.
These GaN devices are now challenging the dominant position of silicon in an
industrial playground in which a Power Amplifier (PA) market size of ~$900M is
forecast for 2008.
Military applications were the first to use WBG devices, especially with the
SiC MESFET being developed through broadly financed DARPA and DoD programs in
the US. Then in 2006, Eudyna jointly announced with NTT that a first 3G
network using GaN HEMT had been deployed in Tokyo for test purposes. New
commercial offerings from CREE, RFMD and Nitronex followed, targeting both
base-station (3G, WiMAX...) and general purpose applications. In parallel, R&D
for space applications remains very strong and the first products are expected
to be implemented in the next few years. Recent announcements show that key
players are more and more focusing on WiMAX/LTE markets, defocussing on the
current 3G/3G+ market for which they claim the time-to-market for WBG devices
is now over. With strong penetration of WiMAX/LTE applications, we forecast
that the market size for GaN RF transistors could reach a level of about $100m
by 2010. The duality between WiMAX and LTE technologies should not widely
impact this growth. The battle will take place not only at a performance and
reliability level but also at the cost level. Thus, innovative GaN-based
substrate makers have a great role to play to help decrease device prices.
This report provides a complete analysis of the applications targeted by GaN
RF transistors with its key market metrics. It describes the main devices in
production or under development as well as the possible alternative substrates
that will help to decrease the device price.
Benefits:
Benefits of the report for equipment and material manufacturers:
- Analysis of the structure of the GaN RF industry and evolution of the
industrial food chain
- Calculation of wafer volumes to be produced for every market segments
- Description of the alternative nitride substrates and related technical
data
Benefits of the report for the GaN devices manufacturers:
- Analysis of the current applications and detailed analysis of the future
businesses
- Analysis of the competition from large companies to small start up
- Volume and price forecasts
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