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[Report]
GaN RF '08
Published: 2008/07
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Table of Contents
- Glossary
- Executive summary
- Latest noteworthy news
- 2007 noteworthy news
- 2006 noteworthy news
GaN RF device market analysis
- Possible applications for GaN devices in RF electronic systems
- GaN device applications roadmap. Time to market
- Technology drivers and FOM for GaN: High Frequency, High Power and
Linearity
- GaN RF device market breakdown. 2007 - 2012 comparison
- 2005-2012 GaN RF device market size. Nominal scenario
- 2005-2012 GaN RF device market size. Table of data: units / ASP / revenues
- 2005-2012 GaN RF device market size Alternative pessimistic scenario
- Analysis of the 2 scenarios. What can we trust in.......?
- 4” epi-wafer needs for GaN-based RF devices market 2005-2012
- Tentative forecast for RF GaN epiwafer market size 2005-2012
- Conclusions and perspectives
GaN HEMT state of the art
- GaN and Silicon FET structure comparison
- GaN / SiC / Si / GaAs high power RF transistors comparison
- Microwave frequencies bands. Comparison of Si, SiGe, GaAs, InP and GaN
frequency and Vb ranges
- GaN FET state-of-the-art: Company / Technology / Pmax / Gain / Fmax / PAE
/ Vds / Gate width
- Latest GaN RF HEMT results Example of IMEC HEMT GaN/Si Examples of RFMD
offer in GaN HEMT (S.I. SiC)
- Examples of Eudyna offer in GaN HEMT (S.I. SiC)
- Examples of CREE offer in GaN HEMT & SiC MESFET
- Examples of Nitronex offer for GaN HEMT (GaN-on-Silicon)
- Cost breakdown of HEMT process: GaN/SiC (3”)
- Cost breakdown of HEMT process: GaN/Si (4”)
- GaN FET commercialization status & announcements
GaN RF device industrial landscape
- Food chain & players in GaN RF business (R&D or production)
- Industrial supply-chain in the US
- Industrial supply-chain in Europe
- Industrial supply-chain in Asia
- Origin of the companies now involved in GaN technology
- Strategy of Si LDMOS companies over the GaN technology
Wireless phone infrastructures: Base stations (BTS) market
- Market drivers of the GaN for BTS
- Remote radio head (RRH) antenna
- Recent announcements in GaN-based technologies for 3G BTS market
- Wireless-phone infrastructure market shares in 2007
- Si LDMOS vs. GaAs pHEMT 2007 status
- Market shares of Si LDMOS vendors for wireless infrastructure in 2007
- WCDMA BTS typical cost distribution
- Wireless phone base-station price analysis (GSM vs. 3G)
- Base stations: 2007 value-chain analysis
- 2005-2012 mobile-phone subscribers in units and AGR (%) Worldwide deployed
macro cellular base-stations 2005-2012 by standards
- Components currently used in base stations
- Estimation of total accessible market for GaN FET in 3G BTS
- Number of 4” equivalent wafers to be produced for GaN FET
manufacturing for 3G base stations market (Conservative scenario)
- Number of 4” equivalent wafers to be produced for GaN devices
manufacturing for 3G base stations market (Breakthrough scenario)
Defense market
- Market drivers of GaN RF electronics in defense applications
- Focus on defense applications Worldwide estimation of the Total Accessible
Market (TAM) for wide Bandgap RF transistors
- Roadmap for RF transistors volumes in defense applications
- 4” equivalent wafers needs in units for GaN MMIC manufacturing for
defense market
- On-going R&D programs in the US for GaN in defense applications
- Example of US DARPA requests: Wide Band Gap Semiconductors for RF
Applications (WBGS-RF)
- On-going R&D programs in Europe for GaN in defense applications: Korrigan
Satellite market
- Market drivers of the GaN electronics in SatCom
V-SAT terminals market
- Market drivers of GaN electronics in V-SAT
- V-SAT market data
- GaN HEMT opportunities for V-SAT Estimated 4” wafers annual needs
CATV market
- Market drivers of GaN electronics in CATV
- CATV market data
- GaN HEMT opportunities for CATV. Estimated device volume and 4”
epi-wafer needs
WiMAX vs. LTE. The race toward 4G has already started.....
- WiMAX & LTE history and definition
- Positioning of WiMAX & LTE over the data rate and the mobility range
- WiMAX / LTE technical comparison
- WiMAX vs. LTE Current positioning of key companies
- WiMAX and LTE deployment planning
- WiMAX technology
- WiMAX standards
- WiMAX profiles/spectrum bands
- WiMAX network requirements
- WiMAX market trends
- WiMAX players
- WiMAX players : a complex food chain
- WiMAX market estimation 2005-2012 subscribers projection
- Market drivers for GaN in WiMAX
- What will be the best GaN substrate for base station application ? Si or
SiC
- Tentative market estimation for WiMAX BTS and related PA & RF transistors
market
- 2005-2012 worldwide annual volume and related sales for WiMAX BTS
infrastructures
- 2005-2012 annual production of GaN 4” wafers for WiMAX BTS
infrastructures
- Conclusions: How WiMAX vs. LTE and related frequency spectrum choices will
impact the GaN RF market?
GaN RF devices. European developments
- European industrial food chain
- Korrigan : the key R&D GaN military project in Europe
- HYPHEN: Hybrid Substrates for Competitive HF Electronics
- GaN-Switchmode: GaN HEMT for base stations
- Power RF foundries in Europe
GaN RF devices. Japanese developments
- Japanese NEDO R&D programs
GaN material. Current developments
- Direct growth or buffer approach
- Composite substrates: wafer bonding approach
- Picogiga SOITEC (F). SopSiC (Silicon on Poly-SiC) substrate
- Aonex Technologies, now AmberWave Systems (US) A-Sapph & A-GaN
- BluGlass. GaN on Glass
- IMEC (B). GaN on Germanium. Ge (111)
- IMEC (B). GaN on Silicon
- Azzurro Semiconductors (D). GaN on Silicon
- Covalent Materials (J). GaN on Silicon (with 3C-SiC buffer layer)
- Nitronex (US). GaN on Silicon
- TDI, now Oxford Instruments (US). GaN/SiC and GaN/Sapphire
- Hitachi Cable (J). GaN/SI.I SiC and GaN/Sapphire
- Cermet (US). GaN on ZnO
- SOD: Silicon On Diamond. Main advantages for GaN growth (1/2)
- Group4 Lab (US). GaN/Diamond. Double wafer bonding approach
- sp3 Diamond Technology (US). DOS (Diamond on Si) & SOD
- Bulk / free-standing GaN wafers status
- GaN / Silicon epiwafer manufacturers status
- GaN/Sapphire & GaN/SiC epiwafer manufacturers status
- Examples of current GaN material pricing
Main metrics of the SiC and Sapphire substrate markets
- Main SiC material manufacturing site locations. Bulk or epi-foundry
- Material polytypes, doping & orientation commercially available
- 2006 & 2007 SiC substrate vendor revenues & related market share. Focus on
S.I. SiC market
- Diameter evolution for semi-insulating SiC substrates to 2012
- 2005-2012 S.I. SiC substrates price evolution for various diameters
- Map of sapphire suppliers location 2007 Total sapphire vendor revenues
(split by Optics & Electronics)
- 2005-2012 sapphire substrate price projection, split by diameter
Review of the main GaN RF devices in production or in development: (Device structure, Main specs, Reliability, .....)
- CREE
- Eudyna
- Freescale
- Fujitsu
- KOPIN
- Matsushita MEI / Panasonic
- NEC
- Nitronex
- OKI
- RFMD
- TriQuint
- Toshiba
- UCSB
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[Report]
GaN RF '08
Published: 2008/07
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Published by : Yole Developpement  |
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Price:
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Product Code : YD70340 |
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