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[Report]

GaN RF '08

Published: 2008/07

Contact 24 hrs/day
Description

Table of Contents

  • Glossary
  • Executive summary
  • Latest noteworthy news
  • 2007 noteworthy news
  • 2006 noteworthy news

GaN RF device market analysis

  • Possible applications for GaN devices in RF electronic systems
  • GaN device applications roadmap. Time to market
  • Technology drivers and FOM for GaN: High Frequency, High Power and Linearity
  • GaN RF device market breakdown. 2007 - 2012 comparison
  • 2005-2012 GaN RF device market size. Nominal scenario
  • 2005-2012 GaN RF device market size. Table of data: units / ASP / revenues
  • 2005-2012 GaN RF device market size Alternative pessimistic scenario
  • Analysis of the 2 scenarios. What can we trust in.......?
  • 4” epi-wafer needs for GaN-based RF devices market 2005-2012
  • Tentative forecast for RF GaN epiwafer market size 2005-2012
  • Conclusions and perspectives

GaN HEMT state of the art

  • GaN and Silicon FET structure comparison
  • GaN / SiC / Si / GaAs high power RF transistors comparison
  • Microwave frequencies bands. Comparison of Si, SiGe, GaAs, InP and GaN frequency and Vb ranges
  • GaN FET state-of-the-art: Company / Technology / Pmax / Gain / Fmax / PAE / Vds / Gate width
  • Latest GaN RF HEMT results Example of IMEC HEMT GaN/Si Examples of RFMD offer in GaN HEMT (S.I. SiC)
  • Examples of Eudyna offer in GaN HEMT (S.I. SiC)
  • Examples of CREE offer in GaN HEMT & SiC MESFET
  • Examples of Nitronex offer for GaN HEMT (GaN-on-Silicon)
  • Cost breakdown of HEMT process: GaN/SiC (3”)
  • Cost breakdown of HEMT process: GaN/Si (4”)
  • GaN FET commercialization status & announcements

GaN RF device industrial landscape

  • Food chain & players in GaN RF business (R&D or production)
  • Industrial supply-chain in the US
  • Industrial supply-chain in Europe
  • Industrial supply-chain in Asia
  • Origin of the companies now involved in GaN technology
  • Strategy of Si LDMOS companies over the GaN technology

Wireless phone infrastructures: Base stations (BTS) market

  • Market drivers of the GaN for BTS
  • Remote radio head (RRH) antenna
  • Recent announcements in GaN-based technologies for 3G BTS market
  • Wireless-phone infrastructure market shares in 2007
  • Si LDMOS vs. GaAs pHEMT 2007 status
  • Market shares of Si LDMOS vendors for wireless infrastructure in 2007
  • WCDMA BTS typical cost distribution
  • Wireless phone base-station price analysis (GSM vs. 3G)
  • Base stations: 2007 value-chain analysis
  • 2005-2012 mobile-phone subscribers in units and AGR (%) Worldwide deployed macro cellular base-stations 2005-2012 by standards
  • Components currently used in base stations
  • Estimation of total accessible market for GaN FET in 3G BTS
  • Number of 4” equivalent wafers to be produced for GaN FET manufacturing for 3G base stations market (Conservative scenario)
  • Number of 4” equivalent wafers to be produced for GaN devices manufacturing for 3G base stations market (Breakthrough scenario)

Defense market

  • Market drivers of GaN RF electronics in defense applications
  • Focus on defense applications Worldwide estimation of the Total Accessible Market (TAM) for wide Bandgap RF transistors
  • Roadmap for RF transistors volumes in defense applications
  • 4” equivalent wafers needs in units for GaN MMIC manufacturing for defense market
  • On-going R&D programs in the US for GaN in defense applications
  • Example of US DARPA requests: Wide Band Gap Semiconductors for RF Applications (WBGS-RF)
  • On-going R&D programs in Europe for GaN in defense applications: Korrigan

Satellite market

  • Market drivers of the GaN electronics in SatCom

V-SAT terminals market

  • Market drivers of GaN electronics in V-SAT
  • V-SAT market data
  • GaN HEMT opportunities for V-SAT Estimated 4” wafers annual needs

CATV market

  • Market drivers of GaN electronics in CATV
  • CATV market data
  • GaN HEMT opportunities for CATV. Estimated device volume and 4” epi-wafer needs

WiMAX vs. LTE. The race toward 4G has already started.....

  • WiMAX & LTE history and definition
  • Positioning of WiMAX & LTE over the data rate and the mobility range
  • WiMAX / LTE technical comparison
  • WiMAX vs. LTE Current positioning of key companies
  • WiMAX and LTE deployment planning
  • WiMAX technology
  • WiMAX standards
  • WiMAX profiles/spectrum bands
  • WiMAX network requirements
  • WiMAX market trends
  • WiMAX players
  • WiMAX players : a complex food chain
  • WiMAX market estimation 2005-2012 subscribers projection
  • Market drivers for GaN in WiMAX
  • What will be the best GaN substrate for base station application ? Si or SiC
  • Tentative market estimation for WiMAX BTS and related PA & RF transistors market
  • 2005-2012 worldwide annual volume and related sales for WiMAX BTS infrastructures
  • 2005-2012 annual production of GaN 4” wafers for WiMAX BTS infrastructures
  • Conclusions: How WiMAX vs. LTE and related frequency spectrum choices will impact the GaN RF market?

GaN RF devices. European developments

  • European industrial food chain
  • Korrigan : the key R&D GaN military project in Europe
  • HYPHEN: Hybrid Substrates for Competitive HF Electronics
  • GaN-Switchmode: GaN HEMT for base stations
  • Power RF foundries in Europe

GaN RF devices. Japanese developments

  • Japanese NEDO R&D programs

GaN material. Current developments

  • Direct growth or buffer approach
  • Composite substrates: wafer bonding approach
  • Picogiga SOITEC (F). SopSiC (Silicon on Poly-SiC) substrate
  • Aonex Technologies, now AmberWave Systems (US) A-Sapph & A-GaN
  • BluGlass. GaN on Glass
  • IMEC (B). GaN on Germanium. Ge (111)
  • IMEC (B). GaN on Silicon
  • Azzurro Semiconductors (D). GaN on Silicon
  • Covalent Materials (J). GaN on Silicon (with 3C-SiC buffer layer)
  • Nitronex (US). GaN on Silicon
  • TDI, now Oxford Instruments (US). GaN/SiC and GaN/Sapphire
  • Hitachi Cable (J). GaN/SI.I SiC and GaN/Sapphire
  • Cermet (US). GaN on ZnO
  • SOD: Silicon On Diamond. Main advantages for GaN growth (1/2)
  • Group4 Lab (US). GaN/Diamond. Double wafer bonding approach
  • sp3 Diamond Technology (US). DOS (Diamond on Si) & SOD
  • Bulk / free-standing GaN wafers status
  • GaN / Silicon epiwafer manufacturers status
  • GaN/Sapphire & GaN/SiC epiwafer manufacturers status
  • Examples of current GaN material pricing

Main metrics of the SiC and Sapphire substrate markets

  • Main SiC material manufacturing site locations. Bulk or epi-foundry
  • Material polytypes, doping & orientation commercially available
  • 2006 & 2007 SiC substrate vendor revenues & related market share. Focus on S.I. SiC market
  • Diameter evolution for semi-insulating SiC substrates to 2012
  • 2005-2012 S.I. SiC substrates price evolution for various diameters
  • Map of sapphire suppliers location 2007 Total sapphire vendor revenues (split by Optics & Electronics)
  • 2005-2012 sapphire substrate price projection, split by diameter

Review of the main GaN RF devices in production or in development: (Device structure, Main specs, Reliability, .....)

  • CREE
  • Eudyna
  • Freescale
  • Fujitsu
  • KOPIN
  • Matsushita MEI / Panasonic
  • NEC
  • Nitronex
  • OKI
  • RFMD
  • TriQuint
  • Toshiba
  • UCSB
Description

[Report]
GaN RF '08
Published: 2008/07
Published by : Yole Developpement Yole Developpement

Price:
US $ 5,890.00 PDF by E-mail (Single User License)
US $ 7,650.00 PDF BY E-mail (Multi-user, single site license)
US $ 10,602.00 PDF By E-mail (Multi-user, multi-site license)
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Product Code : YD70340
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